MUN5133DW1T1G

MUN5133DW1T1G

$0.21
  • Description:TRANS PREBIAS 2PNP 50V SC88
  • Series:-

SKU:3300ea6a79c1 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS 2PNP 50V SC88
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):4.7kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:250mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363

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MUN5133DW1T1G

Overview

The onsemi MUN5133DW1T1G is a dual PNP digital transistor array housed in an SOT-363 (SC-88) surface-mount package. It integrates two independent NPN/PNP transistors with built-in bias resistors, featuring a maximum DC collector current of 100 mA and a collector-emitter voltage rating of 50 V. The device operates within a temperature range of -55 °C to +150 °C, with a typical input resistance of 4.7 kOhms and a power dissipation capacity of 250 mW.

Feature Summary

  • Integrates dual pre-biased PNP transistors with fixed internal resistor networks to simplify circuit design.
  • Provides high-density packaging in a compact six-pin SOT-363 footprint for space-constrained applications.
  • Offers wide operating temperature range suitable for demanding industrial and consumer environments.

Applications

  • General-purpose switching circuits requiring compact dual-transistor solutions.
  • Interface logic level shifting between microcontrollers and peripheral devices.
  • Driver stages for low-current loads in portable electronic equipment.

Procurement Notes

Verify the specific suffix DW1T1G against official datasheets to confirm pinout and electrical characteristics. Ensure compatibility with standard SC-88 footprints during PCB layout. Confirm RoHS compliance status through manufacturer documentation prior to integration into regulated products.

Selection Notes

Select this component when dual PNP switching functionality is required in a minimal footprint. Compare input resistance values against other MUN series variants to match specific drive requirements. Verify thermal management capabilities given the 250 mW power dissipation limit in enclosed designs.

Part Context

This part belongs to the MUN5133DW1 series of pre-biased transistors from onsemi. It shares the same core transistor structure as other MUN5133 variants but utilizes the SOT-363 package for higher density. The series is designed to replace discrete resistor-transistor combinations in digital switching applications.

Replacement Considerations

Direct substitutes include MUN5133DW1T3G and SMUN5133DW1T1G, which share identical electrical specifications and pin configurations. Verify package dimensions and marking codes when transitioning between different manufacturers or tape-and-reel variations.

MUN5133DW1T1GMUN5133DW1T1G
$0.21
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