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The onsemi MUN5133DW1T1G is a dual PNP digital transistor array housed in an SOT-363 (SC-88) surface-mount package. It integrates two independent NPN/PNP transistors with built-in bias resistors, featuring a maximum DC collector current of 100 mA and a collector-emitter voltage rating of 50 V. The device operates within a temperature range of -55 °C to +150 °C, with a typical input resistance of 4.7 kOhms and a power dissipation capacity of 250 mW.
Verify the specific suffix DW1T1G against official datasheets to confirm pinout and electrical characteristics. Ensure compatibility with standard SC-88 footprints during PCB layout. Confirm RoHS compliance status through manufacturer documentation prior to integration into regulated products.
Select this component when dual PNP switching functionality is required in a minimal footprint. Compare input resistance values against other MUN series variants to match specific drive requirements. Verify thermal management capabilities given the 250 mW power dissipation limit in enclosed designs.
This part belongs to the MUN5133DW1 series of pre-biased transistors from onsemi. It shares the same core transistor structure as other MUN5133 variants but utilizes the SOT-363 package for higher density. The series is designed to replace discrete resistor-transistor combinations in digital switching applications.
Direct substitutes include MUN5133DW1T3G and SMUN5133DW1T1G, which share identical electrical specifications and pin configurations. Verify package dimensions and marking codes when transitioning between different manufacturers or tape-and-reel variations.