SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The MUN5134DW1T1G is a dual digital transistor manufactured by onsemi, featuring two PNP transistors integrated with bias resistors within a single surface-mount package. This component operates with a maximum collector-emitter voltage of 50 V and supports a continuous collector current of -100 mA. The typical input resistance is specified at 10 kOhms with a resistor ratio of 0.21. It provides a minimum DC current gain (hFE) of 80 and handles a power dissipation of 250 mW. The device functions reliably across an operating temperature range from -55°C to +150°C and is housed in a compact SC-88-6 package.
Verify the specific part number against official manufacturer documentation to ensure accuracy, as datasheet parameters define the electrical characteristics. Confirm that the SC-88-6 package dimensions match your PCB footprint requirements. Check for RoHS compliance status through the manufacturer's product compliance database before finalizing procurement specifications.
Select this component when a dual PNP configuration with fixed biasing is required to reduce board space and assembly steps. Ensure the 10 kOhm input resistance aligns with your drive source capabilities. Verify that the 50 V voltage rating exceeds your circuit's maximum operating voltage to maintain reliability under all conditions.
This part belongs to the MUN513x series of digital transistors from onsemi, designed for general-purpose switching tasks. It shares the same SC-88-6 package form factor as other devices in the family but differs in internal resistor values and transistor polarity. The series offers a compact alternative to discrete transistor-resistor combinations.
Potential substitutes include other dual PNP digital transistors in SC-88-6 packages with similar 50V ratings and 100mA current capacity. Verify equivalent input resistance and hFE specifications to ensure functional compatibility without redesigning the surrounding circuitry.