MUN5135DW1T1

Overview

The MUN5135DW1T1 is a dual Bias Resistor Transistor (BRT) from onsemi, featuring two PNP silicon transistors integrated with monolithic bias resistor networks in an SOT-363 package. It replaces discrete devices and external resistors to simplify circuit design. Key electrical parameters include a collector-emitter voltage of -50 Vdc, a continuous collector current of -100 mAdc, and a total device dissipation of 187 mW at 25°C. The internal resistors are R1 = 2.2 kΩ and R2 = 47 kΩ, yielding a typical resistor ratio of 0.047. The DC current gain (hFE) has a minimum value of 80.

Feature Summary

• Integrates two PNP transistors with built-in series base and base-emitter resistors into a single surface-mount device.
• Reduces printed circuit board space and component count by eliminating the need for external biasing components.
• Designed for low-power applications where board area is limited.

Applications

• Low-power surface mount circuits requiring compact transistor solutions.
• Digital logic interface circuits replacing discrete bias networks.
• Switching applications utilizing pre-biased PNP transistors.

Procurement Notes

Verify the specific ordering suffix against official documentation to ensure correct packaging and compliance status. Confirm that the SOT-363 package dimensions align with the target PCB footprint requirements. Check for RoHS compliance details if required by the manufacturing process. Ensure the supplier provides valid traceability for the semiconductor components.

Selection Notes

Select this component when a dual PNP BRT configuration with a 2.2 kΩ series resistor and 47 kΩ base-emitter resistor is required. The -50 V rating suits low-voltage digital switching applications. Consider the thermal resistance values if operating near maximum temperature limits. Compare hFE specifications against load requirements to ensure adequate drive capability.

Part Context

This part belongs to the MUN5111DW1T1 series of preferred dual Bias Resistor Transistors. The series includes various combinations of NPN and PNP transistors with different resistor ratios housed in the same SOT-363 package family. These devices are designed to streamline the design of digital circuits by integrating biasing networks directly with the transistor junctions.

Replacement Considerations

MUN5135DW1T1G