MUN5136DW1T1

Overview

The MUN5136DW1T1G is a dual PNP Bias Resistor Transistor (BRT) from onsemi, housed in an SOT-363 (SC-88) package. It integrates two PNP transistors with monolithic bias networks, each consisting of a series base resistor and a base-emitter resistor. Key electrical parameters include a collector-emitter voltage (VCEO) of -50 Vdc, a continuous collector current (IC) of -100 mAdc, and a total device power dissipation (PD) of 250 mW at 25°C when both junctions are heated. The typical input resistors (R1 and R2) are 100 kOhms each, yielding a resistor ratio of 1. The DC current gain (hFE) has a minimum value of 80. The operating temperature range spans from -55°C to +150°C.

Feature Summary

• Integrates dual PNP transistors with built-in bias resistor networks to replace discrete components.
• Designed for low-power surface mount applications where board space is limited.
• Simplifies circuit design by eliminating external resistor bias networks.

Applications

• Low-power surface mount circuits requiring compact transistor solutions.
• Applications necessitating simplified biasing networks for digital switching.
• Space-constrained electronic designs utilizing SC-88 packages.

Procurement Notes

Verify the specific ordering suffix against official documentation to ensure correct packaging and marking codes. Confirm RoHS compliance status through manufacturer declarations prior to integration. Validate thermal performance requirements against the specified junction-to-ambient resistance values for your specific PCB layout conditions.

Selection Notes

Select this component when a dual PNP configuration with high-value bias resistors is required. Ensure the application voltage does not exceed the -50 Vdc rating. Consider the 100 kOhm internal resistors for appropriate base drive currents. Verify that the SOT-363 package dimensions fit the target footprint constraints.

Part Context

This part belongs to the MUN5111DW1T1 series of dual Bias Resistor Transistors. The series offers various combinations of NPN/PNP configurations and resistor values within the same SOT-363 package form factor. This specific model provides a symmetrical dual PNP setup with equal 100 kOhm bias resistors.

Replacement Considerations

MUN5136DW1T1G

FAQ

What is the internal resistor configuration for the MUN5136DW1T1G?

It contains two sets of bias resistors, with each set comprising a series base resistor (R1) and a base-emitter resistor (R2), both typically valued at 100 kOhms.

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is rated at -50 Vdc.

How many terminals does the SOT-363 package have?

The SOT-363 package has six terminals, designated as two emitters, two bases, and two collectors for the dual transistor structure.