SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The MUN5136DW1T1G is a dual PNP digital transistor manufactured by onsemi, housed in an SC-88 (SOT-363) surface-mount package. It integrates two PNP transistors with built-in bias resistors to simplify circuit design. Key electrical specifications include a maximum collector-emitter voltage of 50 V and a continuous collector current of -100 mA. The device features a typical input resistance of 100 kOhms with a resistor ratio of 1. It offers a minimum DC current gain (hFE) of 80 and supports a power dissipation of 250 mW. The component operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix DW1T1G to ensure correct packaging and tape-and-reel configuration. Confirm RoHS compliance status through official datasheets or manufacturer documentation prior to procurement. Ensure compatibility with standard SMD reflow soldering profiles specified for the SC-88 package type.
Select this component when a dual PNP configuration with integrated biasing is required in a small footprint. Compare input resistance values against other MUN series variants if different base drive currents are needed. Verify that the 50V voltage rating and 100mA current capacity meet the specific load requirements of the target application circuit.
This part belongs to the MUN5136DW1 series of pre-biased transistors from onsemi. It is functionally related to other digital transistors in the same family but distinguished by its specific PNP polarity and 100kOhm resistor configuration. It serves as a direct replacement for discrete resistor-transistor networks in space-constrained designs.
Check for pin-compatible alternatives such as the MUN5137DW1T1G if NPN polarity is acceptable. Verify equivalent parts from other manufacturers like DTC143EE or similar BRTs ensuring identical hFE and R1/R2 ratios.