MUN5137DW1T1

Overview

The MUN5137DW1T1 is a dual Bias Resistor Transistor (BRT) containing two PNP silicon transistors with integrated monolithic bias networks in an SOT-363 package. Each transistor features a series base resistor (R1) of 47 kΩ and a base-emitter resistor (R2) of 22 kΩ, yielding a typical ratio of 2.1. The device supports a maximum collector current of -100 mA and a collector-emitter voltage of -50 Vdc. It operates within a junction temperature range of -55°C to +150°C and offers a minimum DC current gain (hFE) of 80 at -5 mA collector current.

Feature Summary

• Integrates two PNP transistors with built-in bias resistors to replace discrete components
• Reduces printed circuit board space requirements through compact surface-mount packaging
• Simplifies circuit design by eliminating external resistor bias networks

Applications

• Low-power surface mount applications requiring board space optimization
• Digital switching circuits utilizing pre-biased transistor arrays
• General-purpose logic interface and level shifting tasks

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm package type and shipping configuration. Ensure that any requested variants match the exact electrical characteristics required for the target application. Cross-reference datasheet revision numbers to validate parameter consistency before finalizing procurement orders.

Selection Notes

Select this component when a dual PNP digital transistor solution is required with specific 47kΩ and 22kΩ internal resistance values. Confirm that the -50V voltage rating and -100mA current limits align with the system's operational requirements. Evaluate the SOT-363 footprint constraints against available board real estate during the initial schematic capture phase.

Part Context

This part belongs to the MUN51xxDW1T1 series of dual Bias Resistor Transistors manufactured by onsemi. The series provides various combinations of internal resistors within the same SOT-363 package form factor. These devices are designed to streamline the integration of bipolar junction transistors into modern surface-mount electronics.

Replacement Considerations

Direct replacement options include other members of the MUN51xxDW1T1 series such as the MUN5136DW1T1 or MUN5135DW1T1, provided their internal resistor ratios match the circuit requirements. Verify pinout compatibility and thermal dissipation characteristics when substituting.