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The MUN5137DW1T1G is a dual PNP digital transistor from onsemi, housed in an SC-88-6 surface-mount package. It integrates two PNP transistors with built-in bias resistors to replace discrete networks. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of -100 mA. The device features a typical input resistance of 100 kOhms with a resistor ratio of 1. Minimum DC current gain (hFE) is specified at 80, with power dissipation rated at 250 mW. Operating temperature ranges from -55°C to +150°C.
Verify the complete part number including the suffix T1G for tape-and-reel packaging configuration. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure ESD handling procedures are followed during assembly due to the small form factor. Cross-reference datasheet revisions to confirm pinout consistency with existing designs.
Select this component when dual PNP switching with integrated biasing is required in a compact footprint. The 100 kOhm input resistance suits standard logic levels. Verify that the 50 V voltage rating and 100 mA current capacity meet the specific load requirements. Consider thermal management for the 250 mW power dissipation limit in enclosed environments.
This device belongs to the MUN5137DW1 series of pre-biased transistors. It is functionally related to other dual PNP digital transistors in the onsemi portfolio, such as the NSVMUN5137DW1T1G which carries AEC-Q101 automotive qualification. The DW1 suffix indicates the specific SC-88-6 package variant used for surface mount technology.
The typical input resistance is 100 kOhms.
Yes, it contains built-in bias resistors integrated with the dual PNP transistors.
The maximum operating temperature is +150°C.