MUN5211DW1T1

MUN5211DW1T1

  • Description:TRANS 2NPN PREBIAS 0.25W SOT363
  • Series:-

SKU:c7c2867fc61b Category: Brand:

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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.25W SOT363
  • Series:-
  • Mfr:onsemi
  • Package:Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:250mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363

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MUN5211DW1T1

Overview

The MUN5211DW1T1 is a dual Bias Resistor Transistor (BRT) from onsemi, featuring two NPN silicon transistors integrated with monolithic bias networks in an SOT-363 package. Each transistor includes a series base resistor and a base-emitter resistor, both nominally 10 kOhms. Key electrical ratings include a collector-emitter voltage of 50 Vdc, a continuous collector current of 100 mAdc, and a total device power dissipation of 250 mW when both junctions are heated at 25°C ambient temperature. The DC current gain (hFE) has a minimum value of 35.

Feature Summary

  • Integrates two NPN transistors with monolithic bias resistor networks to replace discrete components
  • Designed for low-power surface mount applications where board space is limited
  • Simplifies circuit design by eliminating external resistor biasing requirements

Applications

  • Low-power surface mount circuits requiring compact component footprints
  • Digital switching applications utilizing pre-biased transistor configurations
  • Circuit designs aiming to reduce overall component count through integration

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the requested part matches the exact manufacturer designation to ensure compatibility with intended circuit parameters. Cross-reference datasheet specifications with actual application requirements before procurement.

Selection Notes

Select this component for applications requiring dual NPN switching with integrated biasing. Ensure the required collector current does not exceed 100 mAdc and the voltage rating remains within 50 Vdc limits. Consider the SOT-363 package dimensions for PCB layout constraints and verify thermal dissipation capabilities under operating conditions.

Part Context

This component belongs to the MUN5211DW1T1 series of Dual Bias Resistor Transistors manufactured by onsemi. It is part of a family of preferred devices designed to simplify digital transistor circuits by integrating bias resistors directly with the semiconductor junctions.

Replacement Considerations

MUN5211DW1T1G serves as the lead-free equivalent within the same series.

MUN5211DW1T1MUN5211DW1T1

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