SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The MUN5211DW1T1 is a dual Bias Resistor Transistor (BRT) from onsemi, featuring two NPN silicon transistors integrated with monolithic bias networks in an SOT-363 package. Each transistor includes a series base resistor and a base-emitter resistor, both nominally 10 kOhms. Key electrical ratings include a collector-emitter voltage of 50 Vdc, a continuous collector current of 100 mAdc, and a total device power dissipation of 250 mW when both junctions are heated at 25°C ambient temperature. The DC current gain (hFE) has a minimum value of 35.
Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the requested part matches the exact manufacturer designation to ensure compatibility with intended circuit parameters. Cross-reference datasheet specifications with actual application requirements before procurement.
Select this component for applications requiring dual NPN switching with integrated biasing. Ensure the required collector current does not exceed 100 mAdc and the voltage rating remains within 50 Vdc limits. Consider the SOT-363 package dimensions for PCB layout constraints and verify thermal dissipation capabilities under operating conditions.
This component belongs to the MUN5211DW1T1 series of Dual Bias Resistor Transistors manufactured by onsemi. It is part of a family of preferred devices designed to simplify digital transistor circuits by integrating bias resistors directly with the semiconductor junctions.
MUN5211DW1T1G serves as the lead-free equivalent within the same series.