MUN5212DW1T1

MUN5212DW1T1

$0.05
  • Description:TRANS 2NPN PREBIAS 0.25W SOT363
  • Series:-

SKU:604cf8862439 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.25W SOT363
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):22kOhms
  • Resistor - Emitter Base (R2):22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:250mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363

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MUN5212DW1T1

Overview

The MUN5212DW1T1 is a dual Bias Resistor Transistor (BRT) from onsemi, housed in an SOT-363 package. It integrates two NPN silicon transistors with monolithic bias resistor networks. Each transistor features a series base resistor and a base-emitter resistor. The device supports a collector current of 100 mA and withstands a collector-emitter voltage of 50 Vdc. Internal resistors R1 and R2 are both 22 kOhms. DC current gain ranges from 60 to 100 at 5.0 mA collector current. Total power dissipation is 187 mW at 25°C for one junction heated.

Feature Summary

  • Integrates two NPN transistors with built-in bias resistors into a single surface-mount device
  • Eliminates external discrete components to reduce board space and simplify circuit design

Applications

  • Low power surface mount applications requiring compact footprint
  • Circuit designs needing simplified biasing networks
  • Applications prioritizing reduced component count

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm RoHS compliance status through manufacturer datasheets or material declarations before procurement. Ensure the requested quantity matches the standard tape and reel shipping configuration specified by the supplier.

Selection Notes

Select this component when a dual NPN digital transistor with equal bias resistors is required. Verify that the 22 kOhm internal resistance values align with the target logic levels. Check thermal dissipation limits relative to ambient temperature conditions. Compare electrical characteristics against alternative BRT devices if different resistor ratios are needed.

Part Context

This part belongs to the MUN5211DW1T1 series of dual Bias Resistor Transistors. The series includes various configurations with different resistor values and ratios. All devices share the same SOT-363 package and general electrical ratings while differing in internal resistance specifications.

Replacement Considerations

MUN5212DW1T1G serves as the lead-free equivalent within the same series.

MUN5212DW1T1MUN5212DW1T1
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