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The MUN5212DW1T1 is a dual Bias Resistor Transistor (BRT) from onsemi, housed in an SOT-363 package. It integrates two NPN silicon transistors with monolithic bias resistor networks. Each transistor features a series base resistor and a base-emitter resistor. The device supports a collector current of 100 mA and withstands a collector-emitter voltage of 50 Vdc. Internal resistors R1 and R2 are both 22 kOhms. DC current gain ranges from 60 to 100 at 5.0 mA collector current. Total power dissipation is 187 mW at 25°C for one junction heated.
Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm RoHS compliance status through manufacturer datasheets or material declarations before procurement. Ensure the requested quantity matches the standard tape and reel shipping configuration specified by the supplier.
Select this component when a dual NPN digital transistor with equal bias resistors is required. Verify that the 22 kOhm internal resistance values align with the target logic levels. Check thermal dissipation limits relative to ambient temperature conditions. Compare electrical characteristics against alternative BRT devices if different resistor ratios are needed.
This part belongs to the MUN5211DW1T1 series of dual Bias Resistor Transistors. The series includes various configurations with different resistor values and ratios. All devices share the same SOT-363 package and general electrical ratings while differing in internal resistance specifications.
MUN5212DW1T1G serves as the lead-free equivalent within the same series.