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The onsemi MUN5213DW1T1 is a dual Bias Resistor Transistor (BRT) housed in an SOT-363 package. It integrates two NPN silicon transistors with monolithic bias networks, each comprising a series base resistor and a base-emitter resistor. Key electrical parameters include a collector-base voltage of 50 Vdc, a collector-emitter voltage of 50 Vdc, and a maximum collector current of 100 mAdc. The device features a typical input resistance of 47 kOhms for both resistors. Thermal characteristics specify a total device dissipation of 187 mW when one junction is heated and 250 mW when both are heated at 25°C ambient temperature.
Verify the specific ordering suffix against official documentation to confirm package type and environmental compliance status. Confirm that the requested part number matches the exact electrical specifications required for the target application. Ensure compatibility with standard surface mount assembly processes before finalizing procurement orders.
Select this component when a dual NPN configuration with integrated biasing is required. Verify that the 47 kOhm internal resistor values align with the circuit's drive requirements. Ensure the 50 Vdc voltage rating and 100 mA current capacity meet the operational limits of the intended load.
This component belongs to the MUN5211DW1T1 series of Dual Bias Resistor Transistors. The series includes various configurations with different resistor ratios and values, all sharing the same SOT-363 package and fundamental transistor structure. This specific model provides a balanced 47 kOhm/47 kOhm resistor network for each NPN transistor.
MUN5213DW1T1G