MUN5213DW1T3G

MUN5213DW1T3G

$0.20
  • Description:TRANS PREBIAS 2NPN 50V SC88
  • Series:-

SKU:ec6a3efe824b Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS PREBIAS 2NPN 50V SC88
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):47kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:250mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363

Download product information

MUN5213DW1T3G

Overview

The onsemi MUN5213DW1T3G is a dual Bias Resistor Transistor (BRT) containing two NPN silicon transistors with monolithic bias resistor networks in an SOT-363 package. It integrates a series base resistor (R1) of 47 kΩ and a base-emitter resistor (R2) of 47 kΩ to simplify circuit design. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a maximum power dissipation (PD) of 250 mW at 25°C ambient temperature. The device ensures a minimum DC current gain (hFE) of 80 at IC=5mA and VCE=10V, with a maximum collector cutoff current of 500nA.

Feature Summary

  • Integrates two NPN transistors with built-in bias resistors to replace discrete components
  • Reduces printed circuit board space requirements through compact SOT-363 packaging
  • Simplifies circuit design by eliminating external resistor networks

Applications

  • Low power surface mount applications where board space is limited
  • General purpose switching circuits requiring integrated biasing
  • Digital logic interface circuits replacing discrete transistor-resistor combinations

Procurement Notes

Verify the specific suffix 'T3G' against the manufacturer's official datasheet to confirm tape and reel packaging specifications and RoHS compliance status. Ensure the ordering part number matches the exact pinout and electrical characteristics required for the target application, as variations exist within the MUN5213 family.

Selection Notes

Select this component when a dual NPN configuration with equal 47kΩ bias resistors is required. Compare the 250mW power dissipation rating against thermal constraints. Verify that the 50V voltage rating exceeds the maximum operating voltage in the specific circuit environment to ensure reliable operation.

Part Context

This component belongs to the MUN5213DW1T1 series of Dual Bias Resistor Transistors manufactured by onsemi. These devices are designed to integrate a single transistor with a monolithic bias network consisting of two resistors into a single surface-mount package, streamlining the assembly process for digital transistor applications.

Replacement Considerations

MUN5213DW1T1G is a verified equivalent part number within the same product family offering identical electrical characteristics and pinout configuration.

MUN5213DW1T3GMUN5213DW1T3G
$0.20
Buy Now