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The onsemi MUN5213DW1T3G is a dual Bias Resistor Transistor (BRT) containing two NPN silicon transistors with monolithic bias resistor networks in an SOT-363 package. It integrates a series base resistor (R1) of 47 kΩ and a base-emitter resistor (R2) of 47 kΩ to simplify circuit design. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a maximum power dissipation (PD) of 250 mW at 25°C ambient temperature. The device ensures a minimum DC current gain (hFE) of 80 at IC=5mA and VCE=10V, with a maximum collector cutoff current of 500nA.
Verify the specific suffix 'T3G' against the manufacturer's official datasheet to confirm tape and reel packaging specifications and RoHS compliance status. Ensure the ordering part number matches the exact pinout and electrical characteristics required for the target application, as variations exist within the MUN5213 family.
Select this component when a dual NPN configuration with equal 47kΩ bias resistors is required. Compare the 250mW power dissipation rating against thermal constraints. Verify that the 50V voltage rating exceeds the maximum operating voltage in the specific circuit environment to ensure reliable operation.
This component belongs to the MUN5213DW1T1 series of Dual Bias Resistor Transistors manufactured by onsemi. These devices are designed to integrate a single transistor with a monolithic bias network consisting of two resistors into a single surface-mount package, streamlining the assembly process for digital transistor applications.
MUN5213DW1T1G is a verified equivalent part number within the same product family offering identical electrical characteristics and pinout configuration.