MUN5215DW1T1

MUN5215DW1T1

$0.05
  • Description:TRANS BRT NPN DUAL 50V SOT-363
  • Series:-

SKU:936ffbfb39b2 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS BRT NPN DUAL 50V SOT-363
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:-
  • Current - Collector (Ic) (Max):-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Resistor - Base (R1):-
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):-
  • Frequency - Transition:-
  • Power - Max:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-

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MUN5215DW1T1

Overview

The MUN5215DW1T1 is a dual Bias Resistor Transistor (BRT) from onsemi, housed in an SOT-363 package. It integrates two NPN silicon transistors with monolithic bias networks. Each transistor features a series base resistor of 10 kOhms and an open base-emitter connection. Key electrical ratings include a collector-base voltage of 50 Vdc, a collector-emitter voltage of 50 Vdc, and a maximum collector current of 100 mAdc. The device operates within a temperature range of -55°C to +150°C. Total device dissipation is rated at 250 mW for one junction heated and 385 mW for both junctions heated at 25°C ambient.

Feature Summary

  • Integrates two NPN transistors with monolithic bias networks into a single surface-mount device
  • Eliminates the need for external discrete resistors by incorporating internal biasing components
  • Designed to simplify circuit design and reduce overall board space requirements

Applications

  • Low power surface mount applications where board space is limited
  • Circuit designs requiring simplified biasing networks
  • Digital switching circuits utilizing pre-biased transistors

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the component meets RoHS compliance standards if required for the assembly process. Ensure the selected variant matches the intended thermal and electrical specifications for the target application environment.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required. The 10 kOhm series base resistor value suits standard logic interface levels. Consider the SOT-363 package dimensions for footprint constraints. Verify thermal dissipation capabilities relative to the expected operating ambient temperature and load conditions.

Part Context

This part belongs to the MUN5211DW1T1 Series of Dual Bias Resistor Transistors. The series includes various combinations of NPN transistors with different internal resistor values. All devices in this family share the same SOT-363 package and general electrical characteristics, differing primarily in their internal resistance ratios.

Replacement Considerations

MUN5215DW1T1G serves as the lead-free equivalent within the same series.

MUN5215DW1T1MUN5215DW1T1
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