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The MUN5215DW1T1 is a dual Bias Resistor Transistor (BRT) from onsemi, housed in an SOT-363 package. It integrates two NPN silicon transistors with monolithic bias networks. Each transistor features a series base resistor of 10 kOhms and an open base-emitter connection. Key electrical ratings include a collector-base voltage of 50 Vdc, a collector-emitter voltage of 50 Vdc, and a maximum collector current of 100 mAdc. The device operates within a temperature range of -55°C to +150°C. Total device dissipation is rated at 250 mW for one junction heated and 385 mW for both junctions heated at 25°C ambient.
Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the component meets RoHS compliance standards if required for the assembly process. Ensure the selected variant matches the intended thermal and electrical specifications for the target application environment.
Select this component when a dual NPN configuration with integrated biasing is required. The 10 kOhm series base resistor value suits standard logic interface levels. Consider the SOT-363 package dimensions for footprint constraints. Verify thermal dissipation capabilities relative to the expected operating ambient temperature and load conditions.
This part belongs to the MUN5211DW1T1 Series of Dual Bias Resistor Transistors. The series includes various combinations of NPN transistors with different internal resistor values. All devices in this family share the same SOT-363 package and general electrical characteristics, differing primarily in their internal resistance ratios.
MUN5215DW1T1G serves as the lead-free equivalent within the same series.