MUN5215DW1T1G

MUN5215DW1T1G

$0.20
  • Description:TRANS 2NPN PREBIAS 0.25W SOT363
  • Series:-

SKU:345711628495 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.25W SOT363
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:250mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363

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MUN5215DW1T1G

Overview

The onsemi MUN5215DW1T1G is a dual NPN digital transistor housed in a SOT-363 (SC-88) surface-mount package with six pins. It features an integrated bias resistor network, typically consisting of a 10 kOhm input resistor. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V DC and a continuous collector current (IC) of 100 mA. The device operates within a temperature range of -55°C to +150°C, with a power dissipation rating of 256 mW. It meets AEC-Q101 automotive qualification standards and offers a minimum DC current gain (hFE) of 160.

Feature Summary

  • Integrates dual NPN transistors with built-in bias resistors for simplified circuit design
  • Optimized for high-speed switching applications with low saturation voltage characteristics
  • Automotive-grade reliability compliant with AEC-Q101 standards for harsh environments

Applications

  • General-purpose switching circuits in consumer electronics
  • Driver stages for relays, solenoids, and LED loads
  • Logic level shifting and buffer interfaces in microcontroller systems

Procurement Notes

Verify the complete ordering part number against official onsemi documentation to ensure correct suffixes and packaging options. Confirm that the specific revision matches the required automotive or industrial grade specifications. Cross-reference the datasheet version to validate updated thermal and electrical parameters before finalizing procurement decisions.

Selection Notes

Select this component when a compact dual NPN solution with integrated biasing is required for space-constrained designs. Ensure the 50 V voltage rating and 100 mA current capacity align with the target load requirements. Consider the SOT-363 footprint constraints and thermal dissipation limits relative to the expected operating duty cycle and ambient temperature conditions.

Part Context

This component belongs to the MUN5215DW1 series of pre-biased bipolar junction transistors. It is designed as a drop-in replacement for discrete resistor-transistor networks, reducing board space and assembly complexity. The series is widely utilized in portable devices and automotive modules where reliable switching performance and minimal external component count are critical design priorities.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with alternative manufacturers by matching key parameters such as VCEO, IC, hFE, and package dimensions.

MUN5215DW1T1GMUN5215DW1T1G
$0.20
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