MUN5216DW1T1

Overview

The onsemi MUN5216DW1T1 is a dual Bias Resistor Transistor (BRT) housed in an SOT-363 package. It integrates two NPN silicon transistors with monolithic bias networks, each comprising a series base resistor and a base-emitter resistor. Key electrical parameters include a collector-base voltage of 50 Vdc, a collector-emitter voltage of 50 Vdc, and a maximum collector current of 100 mAdc. The device features a typical input resistance of 4.7 kOhms with an open base-emitter resistor configuration. Thermal characteristics specify a total device dissipation of 187 mW for one junction heated and 250 mW for both junctions heated at 25°C ambient temperature.

Feature Summary

• Integrates two NPN transistors with monolithic bias networks to replace individual devices and external resistors
• Reduces board space and component count by consolidating discrete components into a single surface mount package
• Simplifies circuit design by eliminating the need for external biasing resistor networks

Applications

• Low power surface mount applications where board space is limited
• Digital switching circuits requiring integrated biasing
• General purpose transistor arrays for signal processing

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and environmental compliance. Ensure that any additional characters in the part number do not alter the electrical characteristics or pinout configuration defined in the datasheet. Cross-reference the manufacturer's latest publication order number to guarantee authenticity and correct revision status before procurement.

Selection Notes

Select this component when a dual NPN BRT with low input resistance is required. The 4.7 kOhm series resistor suits applications needing higher drive currents compared to standard 10 kOhm variants. Verify that the 50 Vdc voltage rating and 100 mA current capacity align with the target circuit requirements. Consider the SOT-363 footprint constraints during PCB layout planning.

Part Context

This device belongs to the MUN5211DW1T1 series of Dual Bias Resistor Transistors from onsemi. The series offers various resistor combinations within the same SOT-363 package to provide flexibility in biasing configurations. The MUN5216DW1T1 specifically provides a unique 4.7 kOhm series resistor with an open emitter resistor, distinguishing it from other series members like the MUN5211 or MUN5212.

Replacement Considerations

MUN5216DW1T1G is the lead-free version of this component with identical electrical specifications and pinout.

FAQ

What is the internal resistor configuration for the MUN5216DW1T1?

The MUN5216DW1T1 features a series base resistor of 4.7 kOhms and an open (infinite resistance) base-emitter resistor.

What is the maximum power dissipation for this device?

The total device dissipation is 187 mW when one junction is heated and 250 mW when both junctions are heated at an ambient temperature of 25°C.

Does this component contain both NPN and PNP transistors?

No, the MUN5216DW1T1 contains two NPN silicon transistors. Complementary NPN/PNP pairs are available in other series members such as the MUN5311.