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The MUN5216DW1T1G is a dual NPN Bias Resistor Transistor (BRT) from onsemi, housed in a SOT-363 package. It integrates two NPN transistors with monolithic bias networks, each consisting of a series base resistor and a base-emitter resistor. Key electrical ratings include a maximum collector current of 100 mA, a collector-base voltage of 50 V, and a collector-emitter voltage of 50 V. The device features a typical DC current gain of 350 at 5 mA and 10 V. Thermal characteristics specify a total device dissipation of 256 mW at 25°C for one junction heated. The input resistor R1 has a typical value of 4.7 kΩ.
Verify the specific ordering suffix and package style against the manufacturer's latest documentation before procurement. Confirm that the AEC-Q101 qualification aligns with project requirements. Ensure compliance with RoHS and halogen-free specifications as stated in the datasheet. Check for any discontinuation notices or recommended alternative part numbers provided by onsemi.
Select this component when a dual NPN configuration with integrated biasing is required to minimize footprint. Consider the 50 V voltage rating and 100 mA current capacity for appropriate load handling. Evaluate thermal dissipation limits based on ambient temperature conditions and pad layout. Verify pin compatibility with existing PCB footprints for the SOT-363 package.
This device belongs to the MUN5216DW1 series of dual NPN Bias Resistor Transistors. It is designed to simplify circuit design by integrating bias resistors directly with the transistor structure. The series offers options for different packages including SOT-363 and SOT-563, catering to various surface mount application needs.
Consult onsemi for current alternatives if the NSBC143TDXV6T5G variant is discontinued. Verify functional equivalence regarding pinout and electrical parameters when considering cross-references.