MUN5230DW1T1

Overview

The MUN5230DW1T1 is a dual NPN Bias Resistor Transistor (BRT) housed in an SOT-363 package. It integrates two NPN transistors with monolithic bias networks, each consisting of a series base resistor and a base-emitter resistor. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 Vdc, a continuous collector current (IC) of 100 mAdc, and a total device power dissipation (PD) of 187 mW at 25°C. The typical input resistors are 1.0 kOhms with a ratio of 1. Minimum DC current gain (hFE) is specified at 3.0.

Feature Summary

• Integrates dual NPN transistors with built-in bias resistor networks to replace discrete components
• Designed for low-power surface mount applications where board space is limited
• Simplifies circuit design by reducing the overall component count

Applications

• Low power surface mount applications requiring compact footprint
• Circuit designs needing simplified biasing networks
• Applications prioritizing reduced board space and component count

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and environmental compliance status. Confirm that the requested part number matches the exact electrical characteristics required for the target application before finalizing procurement orders.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required. Ensure the 50 V collector-emitter voltage and 100 mA current ratings align with the circuit requirements. Verify that the 1.0 kOhm internal resistance values suit the intended drive conditions.

Part Context

This component belongs to the MUN5211DW1T1 Series of Dual Bias Resistor Transistors manufactured by onsemi. The series features NPN silicon surface mount transistors with monolithic bias resistor networks designed to simplify circuit design and reduce board space.

Replacement Considerations

MUN5230DW1T1G serves as the lead-free compliant replacement within the same series.