MUN5231DW1T1G

MUN5231DW1T1G

$0.20
  • Description:TRANS 2NPN PREBIAS 0.25W SOT363
  • Series:-

SKU:2d8289736b4e Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.25W SOT363
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):2.2kOhms
  • Resistor - Emitter Base (R2):2.2kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:8 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:250mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363

Download product information

MUN5231DW1T1G

Overview

The MUN5231DW1T1G is a dual NPN digital transistor (BRT) manufactured by onsemi, housed in an SOT-363-6 surface-mount package. It integrates two NPN transistors with built-in bias resistors, featuring a typical input resistance of 2.2 kOhms and a resistor ratio of 1. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Power dissipation is rated at 187 mW, with a minimum DC current gain (hFE) of 8. It operates within a temperature range of -55°C to +150°C.

Feature Summary

  • Integrates dual NPN transistors with built-in bias resistors for simplified circuit design
  • Provides high-density packaging in a compact SOT-363-6 footprint
  • Supports wide operating temperature ranges suitable for industrial applications

Applications

  • Switching applications in portable devices
  • Driver circuits for logic interfaces
  • General-purpose switching in consumer electronics

Procurement Notes

Verify the specific ordering suffix and manufacturer lot codes against official onsemi documentation to ensure component authenticity. Confirm RoHS compliance status and moisture sensitivity level requirements prior to procurement. Cross-reference the datasheet revision date with manufacturing records to validate technical specifications and environmental certifications.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required in a space-constrained layout. Ensure the 50 V voltage rating and 100 mA current capacity align with the target circuit loads. Compare the 2.2 kOhm internal resistance values against external biasing alternatives to optimize board space and component count.

Part Context

This part belongs to the MUN5231DW1 series of pre-biased transistors from onsemi. It is designed as a replacement for discrete resistor-transistor networks, offering reduced assembly time and improved reliability. The SOT-363 package allows for high-density mounting on printed circuit boards compared to larger through-hole or single-transistor packages.

Replacement Considerations

Verify pinout compatibility and electrical parameters before substituting with other dual NPN BRTs. Check if alternative packages like SC-88 or SC70-6 meet spatial constraints. Ensure equivalent hFE and VCEO ratings are maintained for circuit functionality.

MUN5231DW1T1GMUN5231DW1T1G
$0.20
Buy Now