MUN5232DW1T1

MUN5232DW1T1

$0.03
  • Description:TRANS 2NPN PREBIAS 0.25W SOT363
  • Series:-

SKU:bc08d481aa85 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.25W SOT363
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):4.7kOhms
  • Resistor - Emitter Base (R2):4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:15 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:250mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363

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MUN5232DW1T1

Overview

The MUN5232DW1T1 is a dual Bias Resistor Transistor (BRT) from the MUN5211DW1T1 series, manufactured by onsemi. It integrates two NPN silicon transistors with monolithic bias networks into a single SOT-363 package. Each transistor includes a series base resistor and a base-emitter resistor. The device supports a collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc. Typical internal resistances are 4.7 kOhms for both R1 and R2. The unit operates within a temperature range of -55°C to +150°C.

Feature Summary

  • Integrates dual NPN transistors with monolithic bias resistor networks to replace discrete components.
  • Designed for low power surface mount applications where board space is limited.
  • Simplifies circuit design by eliminating external biasing resistors.

Applications

  • Low power surface mount circuits requiring compact component footprints.
  • Digital switching applications utilizing integrated bias networks.
  • Systems prioritizing reduced component count and simplified assembly.

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Ensure the procurement source provides valid manufacturer traceability. Confirm that the delivered components match the MUN5232DW1T1 designation and intended electrical characteristics before integration.

Selection Notes

Select this component when a dual NPN BRT configuration with 4.7 kOhm typical resistors is required. The SOT-363 package is suitable for high-density layouts. Validate that the 50 V collector-emitter rating and 100 mA current capacity meet the specific circuit requirements.

Part Context

This part belongs to the MUN5211DW1T1 series of dual Bias Resistor Transistors. The series offers various resistor combinations within the same SOT-363 footprint. The MUN5232DW1T1 specifically utilizes 4.7 kOhm resistors for both the series base and base-emitter positions.

Replacement Considerations

MUN5232DW1T1G serves as the lead-free variant within the same series. Other series members share the SOT-363 package but differ in internal resistance values.

MUN5232DW1T1MUN5232DW1T1
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