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The MUN5232DW1T1 is a dual Bias Resistor Transistor (BRT) from the MUN5211DW1T1 series, manufactured by onsemi. It integrates two NPN silicon transistors with monolithic bias networks into a single SOT-363 package. Each transistor includes a series base resistor and a base-emitter resistor. The device supports a collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc. Typical internal resistances are 4.7 kOhms for both R1 and R2. The unit operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Ensure the procurement source provides valid manufacturer traceability. Confirm that the delivered components match the MUN5232DW1T1 designation and intended electrical characteristics before integration.
Select this component when a dual NPN BRT configuration with 4.7 kOhm typical resistors is required. The SOT-363 package is suitable for high-density layouts. Validate that the 50 V collector-emitter rating and 100 mA current capacity meet the specific circuit requirements.
This part belongs to the MUN5211DW1T1 series of dual Bias Resistor Transistors. The series offers various resistor combinations within the same SOT-363 footprint. The MUN5232DW1T1 specifically utilizes 4.7 kOhm resistors for both the series base and base-emitter positions.
MUN5232DW1T1G serves as the lead-free variant within the same series. Other series members share the SOT-363 package but differ in internal resistance values.