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Product Detailed Parameters
- Description：TRANS 2NPN PREBIAS 0.25W SOT363
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：4.7kOhms
- Resistor - Emitter Base (R2)：4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：15 @ 5mA, 10V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：250mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-88/SC70-6/SOT-363
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Overview
The MUN5232DW1T1G is a dual NPN digital transistor manufactured by onsemi, housed in a SOT-363 (SC-88) surface-mount package with six pins. It features a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device includes built-in bias resistors with a typical value of 4.7 kOhms and a ratio of 1. Key electrical parameters include a minimum DC current gain (hFE) of 15, a power dissipation of 187 mW, and an operating temperature range from -55°C to +150°C.
Feature Summary
- Integrates two NPN transistors with built-in bias resistors for simplified circuit design
- Provides high DC current gain suitable for switching applications
- Operates reliably across a wide industrial temperature range
Applications
- General-purpose switching circuits
- Driver stages for logic interfaces
- Battery-powered portable devices requiring low component count
Procurement Notes
Verify the specific suffix DW1T1G against official datasheets to confirm pinout and resistor values. Confirm RoHS compliance status through manufacturer documentation prior to integration. Ensure storage conditions adhere to moisture sensitivity level requirements specified in the handling guidelines.
Selection Notes
Select this component when a dual NPN configuration with integrated biasing is required to save board space. Compare the 187 mW power dissipation limit against thermal constraints. Verify that the 50 V breakdown voltage meets the circuit's maximum signal levels.
Part Context
This part belongs to the MUN5232DW1 series of pre-biased transistors. It is designed as a compact alternative to discrete resistor-transistor networks. The SOT-363 package allows for high-density mounting on printed circuit boards compared to larger through-hole alternatives.
Replacement Considerations
Check for direct substitutes within the same family, such as MUN5231 or MUN5236, noting differences in resistor values. Verify pin compatibility before replacing with other SOT-363 dual NPN transistors from different manufacturers.
