MUN5233DW1T1

MUN5233DW1T1

$0.03
  • Description:TRANS 2NPN PREBIAS 0.25W SOT363
  • Series:-

SKU:1a3f99fb5466 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.25W SOT363
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):4.7kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:250mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363

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MUN5233DW1T1

Overview

The MUN5233DW1T1 is a dual Bias Resistor Transistor (BRT) from onsemi, featuring two NPN silicon transistors integrated with monolithic bias resistor networks in an SOT-363 package. It replaces discrete components and external biasing resistors to simplify circuit design. Key electrical parameters include a maximum collector-emitter voltage of 50 Vdc, a continuous collector current of 100 mAdc, and a total device power dissipation of 187 mW at 25°C. The internal network consists of a series base resistor (R1) of 4.7 kOhms and a base-emitter resistor (R2) of 47 kOhms.

Feature Summary

  • Integrates two NPN transistors with monolithic bias resistor networks into a single surface-mount device.
  • Eliminates the need for individual external biasing resistors, reducing component count and board space.
  • Designed for low-power applications where minimizing footprint is critical.

Applications

  • Low-power surface mount applications requiring simplified circuit design.
  • Circuit designs prioritizing reduced board space and component count.
  • Digital switching circuits utilizing pre-biased transistor arrays.

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and environmental compliance. Confirm that the requested part matches the exact manufacturer part number to ensure correct integration of the internal resistor values and transistor characteristics.

Selection Notes

Select this component when a dual NPN digital transistor configuration is required within a compact SOT-363 footprint. Ensure the application operates within the specified 50 V collector-emitter voltage limit and 100 mA current rating. Verify thermal management requirements against the 187 mW power dissipation specification at ambient temperatures up to 25°C.

Part Context

This component belongs to the MUN5211DW1T1 Series of Dual Bias Resistor Transistors manufactured by onsemi. The series provides various combinations of NPN transistors with different internal resistor ratios housed in the SC-88/SOT-363 package, designed to replace discrete transistor and resistor networks.

Replacement Considerations

MUN5233DW1T1G

MUN5233DW1T1MUN5233DW1T1
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