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The MUN5233DW1T1 is a dual Bias Resistor Transistor (BRT) from onsemi, featuring two NPN silicon transistors integrated with monolithic bias resistor networks in an SOT-363 package. It replaces discrete components and external biasing resistors to simplify circuit design. Key electrical parameters include a maximum collector-emitter voltage of 50 Vdc, a continuous collector current of 100 mAdc, and a total device power dissipation of 187 mW at 25°C. The internal network consists of a series base resistor (R1) of 4.7 kOhms and a base-emitter resistor (R2) of 47 kOhms.
Verify the specific ordering suffix against official documentation to confirm package type and environmental compliance. Confirm that the requested part matches the exact manufacturer part number to ensure correct integration of the internal resistor values and transistor characteristics.
Select this component when a dual NPN digital transistor configuration is required within a compact SOT-363 footprint. Ensure the application operates within the specified 50 V collector-emitter voltage limit and 100 mA current rating. Verify thermal management requirements against the 187 mW power dissipation specification at ambient temperatures up to 25°C.
This component belongs to the MUN5211DW1T1 Series of Dual Bias Resistor Transistors manufactured by onsemi. The series provides various combinations of NPN transistors with different internal resistor ratios housed in the SC-88/SOT-363 package, designed to replace discrete transistor and resistor networks.
MUN5233DW1T1G