MUN5233DW1T1G

$0.21

Description：TRANS PREBIAS 2NPN 50V SC88
Series：-

SKU:2e8e5a042767 Category: Bipolar Transistor Arrays, Pre-Biased Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS PREBIAS 2NPN 50V SC88
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)：100mA
Voltage - Collector Emitter Breakdown (Max)：50V
Resistor - Base (R1)：4.7kOhms
Resistor - Emitter Base (R2)：47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 10V
pa_vce-saturation-max-ib-ic：
Current - Collector Cutoff (Max)：500nA
Frequency - Transition：-
Power - Max：250mW
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SC-88/SC70-6/SOT-363

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MUN5233DW1T1G

Overview

The MUN5233DW1T1G is a dual NPN digital transistor manufactured by onsemi, housed in a SOT-363 (SC-88) surface-mount package. It integrates two NPN transistors with built-in bias resistors, featuring a typical input resistance of 4.7 kOhms and a resistor ratio of 0.1. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. With a power dissipation rating of 187 mW and a minimum DC current gain (hFE) of 80, it operates within a temperature range of -55°C to +150°C.

Feature Summary

Integrates dual NPN transistors with built-in bias resistors for simplified circuit design
Provides high-density packaging in a compact six-pin SOT-363 form factor
Offers robust electrical performance with 50 V breakdown voltage and 100 mA current handling

Applications

General-purpose switching applications in consumer electronics
Interface circuits requiring level shifting or buffering
Driver stages for low-power loads in portable devices

Procurement Notes

Verify the complete part number including suffixes against official onsemi documentation to ensure correct configuration. Confirm RoHS compliance status through manufacturer declarations. Check for AEC-Q101 automotive qualification if required for specific reliability standards. Validate package markings and pinout assignments prior to PCB layout finalization.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is needed to reduce board space and external component count. Ensure the 4.7 kOhm input resistance aligns with drive source capabilities. Compare power dissipation limits against thermal constraints in the target application environment.

Part Context

This part belongs to the MUN5233DW1 series of pre-biased transistors from onsemi. It is designed as a replacement for discrete resistor-transistor networks, offering improved consistency and reduced assembly complexity. The SOT-363 package allows for high-density mounting on printed circuit boards.