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Product Detailed Parameters
- Description：TRANS 2NPN PREBIAS 0.25W SOT363
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：22kOhms
- Resistor - Emitter Base (R2)：47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 10V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：250mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-88/SC70-6/SOT-363
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Overview
The MUN5234DW1T1G is a dual NPN digital transistor array manufactured by onsemi, housed in a surface-mount SOT-363 (SC-88) package with six pins. It features a maximum collector-emitter voltage (VCEO) of 50 V DC and a continuous collector current (IC) of 100 mA. The device includes integrated base resistors, typically 4.7 kOhms, to simplify biasing circuitry. Key electrical parameters include a minimum DC current gain (hFE) of 80 at specified test conditions, a power dissipation (Pd) of 187 mW, and an emitter-base voltage (VEBO) of 6 V. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- Integrates two NPN transistors with built-in biasing resistors for simplified circuit design.
- Provides high current gain and low saturation voltage for efficient switching applications.
- Utilizes a compact SOT-363 surface-mount package suitable for space-constrained designs.
Applications
- General-purpose switching circuits
- Driver stages for logic interfaces
- Battery-powered portable devices
Procurement Notes
Verify the exact ordering suffix and manufacturer lot codes against official onsemi documentation to ensure component authenticity. Confirm that the received parts match the specific MUN5234DW1T1G designation, as variations may exist within the broader MUN52xx family. Cross-reference datasheet revisions to validate electrical characteristics prior to integration into final assemblies.
Selection Notes
Select this component when a dual NPN configuration with integrated biasing is required for signal switching or level shifting. Ensure the 50 V voltage rating and 100 mA current capacity align with the target circuit requirements. Consider the SOT-363 footprint constraints and thermal dissipation limits of 187 mW during layout planning.
Part Context
This part belongs to the MUN523x series of pre-biased digital transistors from onsemi. These devices consolidate discrete resistor and transistor networks into single packages, reducing board space and assembly costs. The DW1 suffix indicates the specific SOT-363 packaging variant used for surface-mount technology applications.
Replacement Considerations
Compatible substitutes include other dual NPN BRTs in SOT-363 packages with similar 50 V ratings and 4.7 kOhm base resistors, such as the MUN5234 from other manufacturers, provided pinouts and electrical specs are verified.
