MUN5235DW1T1

Overview

The MUN5235DW1T1 is a dual NPN Bias Resistor Transistor (BRT) from onsemi, housed in an SOT-363 surface-mount package. It integrates two monolithic bias networks, each comprising a series base resistor and a base-emitter resistor, to replace discrete components. Key electrical parameters include a collector-emitter voltage of 50 Vdc, a continuous collector current of 100 mAdc, and a minimum DC current gain of 80 at 5 mA. The typical input resistance is 2.2 kOhms with a resistor ratio of 0.047. Thermal characteristics specify a total device dissipation of 187 mW at 25°C for one junction heated.

Feature Summary

• Integrates dual NPN transistors with monolithic bias resistor networks to simplify circuit design.
• Reduces board space and component count by replacing individual devices and external resistors.
• Designed for low power surface mount applications where board space is limited.

Applications

• Low power surface mount applications requiring compact transistor solutions.
• Circuit designs needing simplified biasing networks for digital switching.
• Applications prioritizing reduced component count and board space optimization.

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and environmental compliance. Confirm that the requested part number matches the exact electrical characteristics required for the application. Cross-reference the manufacturer's latest datasheet to ensure the component remains active and available for production.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required. Ensure the 50 V collector-emitter voltage and 100 mA current ratings meet the circuit demands. Verify that the 2.2 kOhm input resistance aligns with the driving source capabilities. Consider the SOT-363 package dimensions for PCB layout constraints.

Part Context

This component belongs to the MUN5211DW1T1 Series, which includes various dual BRT configurations with different resistor values. All devices in this series share the same SOT-363 package and general electrical structure but differ in internal resistor ratios and current gain specifications. The series is designed for consistent performance across multiple biasing requirements.

Replacement Considerations

Direct substitutes within the same series include other MUN52xxDW1T1 variants with matching or compatible resistor values. Verify that any replacement maintains the required hFE and voltage ratings. Check for equivalent packages and thermal characteristics to ensure compatibility with existing PCB layouts.

FAQ

What is the typical input resistance for the MUN5235DW1T1?

The typical input resistance (R1) for the MUN5235DW1T1 is 2.2 kOhms.

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) rating is 50 Vdc.

How many transistors are integrated in this package?

The MUN5235DW1T1 contains two independent NPN transistors, each with its own bias resistor network.