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The MUN5235DW1T1G is a dual NPN digital transistor (BRT) manufactured by onsemi, housed in a SOT-363-6 surface-mount package. It integrates two NPN transistors with built-in bias resistors, featuring a typical input resistance of 2.2 kOhms and a resistor ratio of 0.047. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Power dissipation is rated at 187 mW, with an operating temperature range from -55°C to +150°C. The minimum DC current gain (hFE) is specified as 80.
Verify the complete part number including the suffix T1G against official onsemi documentation to ensure correct packaging and compliance status. Confirm that the SOT-363-6 package dimensions match the target PCB footprint requirements. Check for RoHS and REACH compliance declarations specific to the manufacturing batch before integration into final assemblies.
Select this component when a dual NPN configuration with fixed biasing is required in a minimal footprint. The 2.2 kOhm input resistance suits direct interfacing with standard logic outputs. Ensure the 187 mW power dissipation limit accommodates the thermal conditions of the application environment without exceeding the 150°C junction temperature rating.
This component belongs to the MUN5235DW1 series of pre-biased transistors. It shares the SOT-363 package with variants like MUN5234DW1 and MUN5236DW1, differing primarily in internal resistor values. The 'T1G' suffix indicates tape-and-reel packaging and lead-free construction compliant with environmental standards.
Direct substitutes within the same family include MUN5234DW1T1G and MUN5236DW1T1G, provided their specific resistor ratios align with the circuit design requirements. Cross-manufacturer equivalents in SOT-363 packages must be verified for pin compatibility and electrical parameter matching.