MUN5236DW1T1

MUN5236DW1T1

$0.09
  • Description:TRANS 2NPN PREBIAS 0.25W SOT363
  • Series:-

SKU:1168b0e3b162 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.25W SOT363
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):100kOhms
  • Resistor - Emitter Base (R2):100kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:250mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363

Download product information

MUN5236DW1T1

Overview

The MUN5236DW1T1 is a dual Bias Resistor Transistor (BRT) manufactured by onsemi, designed to replace single devices and external resistor bias networks. It integrates two NPN transistors with monolithic bias resistor networks into a single surface-mount package. The device features a typical input resistance of 10 kOhms and a typical resistor ratio of 1. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current of 100 mA, and a minimum DC current gain (hFE) of 80. Power dissipation is rated at 250 mW, with an operating temperature range from -55°C to +150°C. The component is housed in a SC-88/SC70-6/SOT-363 package.

Feature Summary

  • Integrates two NPN transistors with built-in bias resistors to simplify circuit design
  • Reduces board space and component count by replacing discrete transistor-resistor networks
  • Monolithic construction ensures consistent biasing characteristics

Applications

  • Low power surface mount applications where board space is limited
  • General purpose switching circuits requiring simplified biasing
  • Digital logic interface circuits

Procurement Notes

Verify the RoHS compliance status carefully, as historical data indicates non-compliant variants exist for this part number. Confirm the specific manufacturing revision and lead time requirements with the supplier prior to ordering. Ensure the packaging format matches the production line needs, typically available in tape and reel configurations.

Selection Notes

Select this component when a dual NPN BRT configuration with a 10kOhm base resistor is required. Compare against single-channel alternatives like the MUN5236T1G if only one channel is needed. Verify that the 50V voltage rating and 100mA current capacity meet the specific application demands before finalizing the design.

Part Context

This component belongs to the MUN52xx series of Dual Bias Resistor Transistors from onsemi. These devices are engineered to consolidate multiple discrete components into a single footprint, enhancing reliability and reducing assembly complexity in high-density electronic designs.

Replacement Considerations

Direct replacement options include the MUN5236DW1T1G variant, which offers updated environmental compliance. Other compatible dual NPN BRTs from different manufacturers should be evaluated for pin compatibility and electrical parameter matching.

MUN5236DW1T1MUN5236DW1T1
$0.09
Buy Now