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The MUN5236DW1T1 is a dual Bias Resistor Transistor (BRT) manufactured by onsemi, designed to replace single devices and external resistor bias networks. It integrates two NPN transistors with monolithic bias resistor networks into a single surface-mount package. The device features a typical input resistance of 10 kOhms and a typical resistor ratio of 1. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current of 100 mA, and a minimum DC current gain (hFE) of 80. Power dissipation is rated at 250 mW, with an operating temperature range from -55°C to +150°C. The component is housed in a SC-88/SC70-6/SOT-363 package.
Verify the RoHS compliance status carefully, as historical data indicates non-compliant variants exist for this part number. Confirm the specific manufacturing revision and lead time requirements with the supplier prior to ordering. Ensure the packaging format matches the production line needs, typically available in tape and reel configurations.
Select this component when a dual NPN BRT configuration with a 10kOhm base resistor is required. Compare against single-channel alternatives like the MUN5236T1G if only one channel is needed. Verify that the 50V voltage rating and 100mA current capacity meet the specific application demands before finalizing the design.
This component belongs to the MUN52xx series of Dual Bias Resistor Transistors from onsemi. These devices are engineered to consolidate multiple discrete components into a single footprint, enhancing reliability and reducing assembly complexity in high-density electronic designs.
Direct replacement options include the MUN5236DW1T1G variant, which offers updated environmental compliance. Other compatible dual NPN BRTs from different manufacturers should be evaluated for pin compatibility and electrical parameter matching.