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The MUN5236DW1T1G is a dual NPN pre-biased transistor array manufactured by onsemi. It integrates two NPN transistors with built-in bias resistors in a compact SOT-363 surface-mount package. The device supports a maximum collector-emitter voltage (VCEO) of 50V and a continuous collector current (Ic) of 100mA. Each transistor includes a base resistor (R1) and an emitter resistor (R2), both specified at 100 kΩ. The unit offers a minimum DC current gain (hFE) of 80 at 5mA and 10V, with a maximum collector cutoff current of 500nA. Power dissipation is rated at 250mW, and the saturation voltage is limited to 250mV at specific test conditions.
Verify the complete part number including the suffix DW1T1G to ensure correct packaging and configuration. Confirm RoHS compliance status and moisture sensitivity level requirements against project specifications before ordering. Cross-reference the manufacturer datasheet for updated environmental declarations and handling guidelines.
Select this component when a dual NPN configuration with integrated biasing is required. Ensure the 100kΩ internal resistor values align with the target drive current and logic levels. Verify that the 50V voltage rating exceeds the maximum operating voltage in the application environment.
This component belongs to the MUN5236 series of digital transistors from onsemi. It shares the same electrical characteristics as the MUN5236T1G but utilizes a different package format. The series is designed to replace discrete resistor-transistor combinations, reducing board space and assembly complexity.
The MUN5236T1G serves as a functional equivalent within the same product family, offering identical electrical performance in a single-transistor SC-70-3 package rather than the dual SOT-363 configuration.