MUN5236DW1T1G

MUN5236DW1T1G

$0.20
  • Description:TRANS PREBIAS 2NPN 50V SC88
  • Series:-

SKU:847e2955243e Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS 2NPN 50V SC88
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):100kOhms
  • Resistor - Emitter Base (R2):100kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:250mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363

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MUN5236DW1T1G

Overview

The MUN5236DW1T1G is a dual NPN pre-biased transistor array manufactured by onsemi. It integrates two NPN transistors with built-in bias resistors in a compact SOT-363 surface-mount package. The device supports a maximum collector-emitter voltage (VCEO) of 50V and a continuous collector current (Ic) of 100mA. Each transistor includes a base resistor (R1) and an emitter resistor (R2), both specified at 100 kΩ. The unit offers a minimum DC current gain (hFE) of 80 at 5mA and 10V, with a maximum collector cutoff current of 500nA. Power dissipation is rated at 250mW, and the saturation voltage is limited to 250mV at specific test conditions.

Feature Summary

  • Integrates two NPN transistors with monolithic bias resistors for simplified circuit design
  • Provides high DC current gain suitable for switching applications
  • Utilizes a compact six-terminal surface-mount package for space-constrained layouts

Applications

  • General-purpose switching circuits
  • Driver stages for logic interfaces
  • Biasing networks in analog signal processing

Procurement Notes

Verify the complete part number including the suffix DW1T1G to ensure correct packaging and configuration. Confirm RoHS compliance status and moisture sensitivity level requirements against project specifications before ordering. Cross-reference the manufacturer datasheet for updated environmental declarations and handling guidelines.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required. Ensure the 100kΩ internal resistor values align with the target drive current and logic levels. Verify that the 50V voltage rating exceeds the maximum operating voltage in the application environment.

Part Context

This component belongs to the MUN5236 series of digital transistors from onsemi. It shares the same electrical characteristics as the MUN5236T1G but utilizes a different package format. The series is designed to replace discrete resistor-transistor combinations, reducing board space and assembly complexity.

Replacement Considerations

The MUN5236T1G serves as a functional equivalent within the same product family, offering identical electrical performance in a single-transistor SC-70-3 package rather than the dual SOT-363 configuration.

MUN5236DW1T1GMUN5236DW1T1G
$0.20
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