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The MUN5237DW1T1 is a dual Bias Resistor Transistor (BRT) from the onsemi MUN5211DW1T1 series, housed in an SOT-363 package. It integrates two NPN silicon transistors with monolithic bias networks, each comprising a series base resistor and a base-emitter resistor. Key electrical parameters include a collector-emitter voltage of 50 Vdc, continuous collector current of 100 mAdc, and total device dissipation of 187 mW at 25°C. The internal resistors are typically 47 kOhms and 22 kOhms, yielding a ratio of 2.1. Minimum DC current gain is specified at 80.
Verify the specific ordering suffix against official documentation to confirm package type and environmental compliance status. Confirm that the requested part number matches the exact electrical characteristics required for the target application. Ensure compatibility with standard surface mount assembly processes for the designated package style.
Select this component when a dual NPN configuration with integrated biasing is required to minimize board area. Evaluate the specific resistor values and current gain specifications against the circuit requirements. Consider the thermal dissipation limits and operating temperature range during the design phase to ensure reliable performance under expected load conditions.
This component belongs to the MUN5211DW1T1 series of dual Bias Resistor Transistors manufactured by onsemi. The series offers various configurations of integrated resistors within the SOT-363 package to suit different biasing needs while maintaining a consistent form factor for surface mount technology implementations.
MUN5237DW1T1G serves as the lead-free equivalent within the same series.