MUN5237DW1T1G

MUN5237DW1T1G

$0.21
  • Description:TRANS BRT NPN DUAL 50V SC88-6
  • Series:-

SKU:b125db6b171f Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS BRT NPN DUAL 50V SC88-6
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):47kOhms
  • Resistor - Emitter Base (R2):22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:187mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363

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MUN5237DW1T1G

Overview

The MUN5237DW1T1G is a dual Bias Resistor Transistor (BRT) from onsemi, featuring two NPN silicon transistors integrated with monolithic bias resistor networks in an SOT-363 package. It includes a series base resistor (R1) of 47 kΩ and a base-emitter resistor (R2) of 22 kΩ, yielding a typical resistance ratio of 2.1. The device supports a maximum collector current of 100 mA and withstands up to 50 Vdc across the collector-emitter junction. Designed for surface mount applications, it offers a minimum DC current gain of 80 at 5 mA and 10 V, with a total power dissipation of 187 mW.

Feature Summary

  • Integrates two NPN transistors with built-in bias resistors to replace discrete components
  • Reduces printed circuit board space and component count through compact packaging
  • Simplifies circuit design by eliminating external resistor bias networks

Applications

  • Low power surface mount applications requiring board space optimization
  • Digital switching circuits utilizing pre-biased transistor arrays
  • General purpose logic interface and level shifting designs

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm package type and environmental compliance status. Ensure that the selected variant matches the required thermal characteristics and mounting style for the target application environment before finalizing procurement orders.

Selection Notes

Select this component when a dual NPN configuration with fixed internal biasing is required. The 47 kΩ input resistor value determines the drive current requirements. Verify that the 50 V voltage rating and 100 mA current capacity align with the operational limits of the intended load circuitry.

Part Context

This part belongs to the MUN5211DW1T1 Series of Dual Bias Resistor Transistors. The series provides various combinations of NPN transistors with different internal resistor values within the same SOT-363 footprint, allowing designers to standardize on a single package while adjusting biasing parameters.

Replacement Considerations

MUN5237DW1T1 serves as the non-Pb-free equivalent.

MUN5237DW1T1GMUN5237DW1T1G
$0.21
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