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The MUN5237DW1T1G is a dual Bias Resistor Transistor (BRT) from onsemi, featuring two NPN silicon transistors integrated with monolithic bias resistor networks in an SOT-363 package. It includes a series base resistor (R1) of 47 kΩ and a base-emitter resistor (R2) of 22 kΩ, yielding a typical resistance ratio of 2.1. The device supports a maximum collector current of 100 mA and withstands up to 50 Vdc across the collector-emitter junction. Designed for surface mount applications, it offers a minimum DC current gain of 80 at 5 mA and 10 V, with a total power dissipation of 187 mW.
Verify the specific ordering suffix against manufacturer documentation to confirm package type and environmental compliance status. Ensure that the selected variant matches the required thermal characteristics and mounting style for the target application environment before finalizing procurement orders.
Select this component when a dual NPN configuration with fixed internal biasing is required. The 47 kΩ input resistor value determines the drive current requirements. Verify that the 50 V voltage rating and 100 mA current capacity align with the operational limits of the intended load circuitry.
This part belongs to the MUN5211DW1T1 Series of Dual Bias Resistor Transistors. The series provides various combinations of NPN transistors with different internal resistor values within the same SOT-363 footprint, allowing designers to standardize on a single package while adjusting biasing parameters.
MUN5237DW1T1 serves as the non-Pb-free equivalent.