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The MUN5311DW1T1G is a dual digital transistor from onsemi, integrating an NPN and a PNP Bias Resistor Transistor (BRT) within a single SOT-363 package. It features a monolithic bias network with typical input resistors of 10 kOhms and a resistor ratio of 1. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Key electrical parameters include a minimum DC current gain (hFE) of 35 and a power dissipation rating of 187 mW. It operates across a temperature range of -55°C to +150°C and is AEC-Q100 qualified for automotive applications.
Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging and qualification status. Confirm that the component meets all required environmental standards, such as RoHS compliance, prior to integration into final assemblies. Cross-reference datasheet revisions to ensure compatibility with existing design specifications.
Select this component when a compact solution for both NPN and PNP switching is required. The 10 kOhm input resistance suits standard logic interface levels. Ensure the thermal management strategy accounts for the 187 mW power dissipation limit in the SOT-363 package under expected operating conditions.
This part belongs to the MUN5311DW1 series of dual digital transistors. It serves as a complement to other variants in the family, such as the MUN5312, which differs primarily in input resistance values. The SOT-363 form factor is standard for high-density surface mount designs.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical parameter equivalence before considering alternative manufacturers or series.