MUN5311DW1T2G

Overview

The MUN5311DW1T2G is a dual Bias Resistor Transistor (BRT) from onsemi, integrating an NPN and a PNP silicon surface-mount transistor with monolithic bias resistor networks into a single SOT-363 package. It features a typical input resistance of 10 kOhms for both devices and a typical resistor ratio of 1. The component supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Power dissipation is rated at 187 mW, with an operating temperature range spanning from -55°C to +150°C. The minimum DC collector/base gain (hFE) is specified at 35.

Feature Summary

• Integrates complementary NPN and PNP transistors with built-in bias resistors to simplify circuit design and reduce board space.
• Utilizes the compact SOT-363 surface-mount package, ideal for applications where board area is limited.
• Provides high thermal stability with a maximum junction-to-ambient thermal resistance suitable for dense packaging.

Applications

• Low power surface mount applications requiring space-saving transistor solutions.
• General purpose switching circuits utilizing integrated bias networks.
• Digital logic interface circuits replacing discrete resistor-transistor combinations.

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm package type and tape/reel specifications. Ensure that the selected variant matches the required automotive or industrial qualification standards if applicable. Cross-reference the part number with official distributor catalogs to confirm availability and lead times prior to procurement planning.

Selection Notes

Select this component when a complementary NPN/PNP pair with fixed bias resistors is required in a minimal footprint. The 10 kOhm input resistance suits standard logic levels. Compare against similar MUN series parts if different resistance values or higher gain thresholds are needed for specific drive requirements.

Part Context

This device belongs to the MUN5311DW1 series of dual Bias Resistor Transistors. It is functionally related to variants such as MUN5311DW1T1G, differing primarily in packaging configuration or reel specifications rather than electrical characteristics. The series is designed to replace individual transistors and external biasing components.

Replacement Considerations

MUN5311DW1T1G is a confirmed substitute within the same series, typically differing only in packaging format. Verify pinout compatibility and electrical parameters before substitution.