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The onsemi MUN5312DW1T1 is a dual Bias Resistor Transistor (BRT) housed in an SOT-363 package. It integrates one NPN and one PNP silicon transistor with monolithic bias resistor networks, eliminating external components. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 Vdc and a continuous collector current (IC) of 100 mAdc for both devices. The typical input resistors R1 and R2 are both 22 kOhms. Thermal characteristics specify a total device dissipation of 187 mW at 25°C with one junction heated, rising to 256 mW with larger pads. The operating temperature range spans from -55°C to +150°C.
Verify the specific ordering suffix against the manufacturer's current documentation, as suffixes often denote tape and reel quantities or automotive qualification status. Confirm that the requested part matches the exact pinout and marking code defined in the datasheet for the SOT-363 package to ensure correct integration during assembly.
Select this component when a complementary pair of pre-biased transistors is required in a compact footprint. Ensure the 50 V collector-emitter voltage and 100 mA current ratings meet the circuit requirements. Verify that the 22 kOhm internal resistor values provide appropriate base drive for the intended load conditions without exceeding thermal limits.
This component belongs to the MUN5311DW1T1 Series of Dual Bias Resistor Transistors. The series includes various combinations of NPN and PNP devices with different resistor ratios, all sharing the same SOT-363 package form factor. This specific model provides a balanced 1:1 resistor ratio for both the NPN and PNP sections within the complementary pair.
MUN5312DW1T1G