MUN5312DW1T1G

$0.20

Description：TRANS PREBIAS NPN/PNP SOT363
Series：-

SKU:75a677509cc5 Category: Bipolar Transistor Arrays, Pre-Biased Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS PREBIAS NPN/PNP SOT363
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)：100mA
Voltage - Collector Emitter Breakdown (Max)：50V
Resistor - Base (R1)：22kOhms
Resistor - Emitter Base (R2)：22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 5mA, 10V
pa_vce-saturation-max-ib-ic：
Current - Collector Cutoff (Max)：500nA
Frequency - Transition：-
Power - Max：250mW
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SC-88/SC70-6/SOT-363

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MUN5312DW1T1G

Overview

The onsemi MUN5312DW1T1G is a complementary Bias Resistor Transistor (BRT) containing an NPN and a PNP transistor with monolithic bias resistor networks in a SOT-363 package. It integrates two resistors per transistor: a series base resistor (R1) and a base-emitter resistor (R2). Both R1 and R2 have a typical value of 22 kΩ, with a ratio of 1.0. The device supports a maximum collector-emitter voltage (VCEO) of 50 Vdc and continuous collector current (IC) of 100 mAdc. DC current gain (hFE) is typically 100 at IC = 5.0 mA and VCE = 10 V. Collector-emitter saturation voltage (VCE(sat)) is typically 0.25 V at IC = 10 mA. Operating temperature range is -55°C to +150°C.

Feature Summary

Integrates dual transistors with monolithic bias resistor networks to replace discrete components
Complementary configuration includes one NPN and one PNP unit
AEC-Q101 qualified for automotive applications

Applications

Automotive systems requiring AEC-Q101 qualification
Low power surface mount applications where board space is limited
Circuit designs needing simplified biasing networks

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details and compliance status. Confirm that the component meets RoHS requirements and is Pb-Free. Ensure the selected variant aligns with project specifications for thermal characteristics and package dimensions before finalizing procurement orders.

Selection Notes

Select this component when a complementary pair of digital transistors with integrated biasing is required. Verify that the 22 kΩ internal resistor values match the circuit design needs. Consider the SOT-363 package size constraints and the 50 V voltage rating relative to the application's operating conditions.

Part Context

This part belongs to the MUN5312DW1 series of complementary Bias Resistor Transistors. It is designed to simplify circuit design by reducing component count and board space compared to using separate transistors and external resistors. The series is available in multiple packages including SOT-363, SOT-563, and SOT-963.