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Product Detailed Parameters
- Description：TRANS NPN/PNP PREBIAS SOT363
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：22kOhms
- Resistor - Emitter Base (R2)：22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 5mA, 10V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：385mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-88/SC70-6/SOT-363
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Overview
The NSVMUN5312DW1T2G is a complementary Bias Resistor Transistor (BRT) from onsemi, integrating one NPN and one PNP transistor with monolithic bias resistor networks into a single SOT-363 package. Designed to replace discrete devices and external resistors, it simplifies circuit design while reducing board space and component count. The device features a series base resistor (R1) of 22 kΩ and a base-emitter resistor (R2) of 22 kΩ for both polarities. It supports a maximum collector current of 100 mA and withstands collector-emitter voltages up to 50 Vdc. Qualified under AEC-Q101 standards, it operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Integrates dual transistors with built-in bias resistors to eliminate external components
- AEC-Q101 qualified for automotive applications requiring unique site control
- Pb-Free, Halogen Free/BFR Free, and RoHS compliant construction
Applications
- Automotive logic circuits and switching applications
- General-purpose digital switching in consumer electronics
- Interface circuits replacing discrete transistor-resistor networks
Procurement Notes
Verify the specific ordering suffix 'T2G' against the manufacturer's official documentation to confirm tape and reel specifications and packaging orientation. Ensure that the NSV prefix aligns with any required automotive quality or site control changes before finalizing procurement orders.
Selection Notes
Select this component when a compact solution for complementary NPN/PNP switching is required. The integrated 22 kΩ resistors simplify biasing calculations. Verify that the 50 V voltage rating and 100 mA current capacity meet the specific load requirements of the target application circuit.
Part Context
This part belongs to the MUN5312DW1 series of complementary BRTs. It shares electrical characteristics with variants like MUN5312DW1T1G but differs in packaging or qualification prefixes. The NSV prefix typically indicates compliance with specific automotive supply chain requirements.
Replacement Considerations
MUN5312DW1T1G
FAQ
What are the internal resistor values for the NPN and PNP channels?
Both the NPN and PNP channels feature a series base resistor (R1) and a base-emitter resistor (R2), each valued at 22 kΩ.
Is this component suitable for automotive applications?
Yes, the NSV prefix indicates that the device is AEC-Q101 qualified and PPAP capable, meeting requirements for automotive applications.
What is the maximum continuous collector current?
The maximum continuous collector current (IC) is rated at 100 mA for both the NPN and PNP transistors.
