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The MUN5313DW1T1 is a dual Bias Resistor Transistor (BRT) from onsemi, integrating an NPN and a PNP silicon surface mount transistor with a monolithic bias resistor network in a single SOT-363 package. It replaces discrete transistors and external resistors to simplify circuit design. Key electrical parameters include a maximum collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc for both devices. The internal bias network consists of a series base resistor (R1) and a base-emitter resistor (R2), both specified at 47 kOhms typical values. The device operates within a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct shipping configuration and compliance status. Confirm that the component meets all required environmental standards for the intended application before finalizing procurement orders.
Select this component when a complementary pair of digital transistors with identical 47 kOhm bias resistors is required. Ensure the 50 V collector-emitter voltage rating and 100 mA current capacity align with the target circuit load conditions and operating environment.
This part belongs to the MUN5311DW1T1 Series, which includes various combinations of NPN and PNP BRTs with different resistor ratios. All members share the same SOT-363 footprint and general electrical characteristics, differing primarily in their internal R1 and R2 resistance values.
Direct replacements include other manufacturers' parts offering identical NPN/PNP configurations with 47k/47k bias resistors in SOT-363 packages. Verify pinout compatibility and thermal resistance specifications when substituting with equivalent components from other suppliers.