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The MUN5313DW1T1G is a dual Bias Resistor Transistor (BRT) from onsemi, housed in an SOT-363 package. It integrates two NPN transistors with monolithic bias resistor networks, each consisting of a series base resistor and a base-emitter resistor. The device supports a maximum collector-emitter voltage of 50 Vdc and continuous collector current of 100 mAdc. Typical input resistance is 47 kOhms with a ratio of 1. DC current gain is minimum 80 at 5 mA and 10 V. Power dissipation reaches 256 mW for one junction heated and 385 mW for both junctions heated at 25°C ambient. Operating temperature ranges from -55°C to +150°C.
Verify the specific ordering suffix and package style against the manufacturer's latest documentation before procurement. Confirm that the SOT-363 pinout matches the intended PCB footprint. Ensure compliance with RoHS and Pb-Free requirements if specified for the application. Check for any discontinued status or recommended new design alternatives via official channels.
Select this component when a dual NPN digital transistor configuration is required within a compact SOT-363 footprint. Consider the 47 kOhm typical input resistance and 50 V voltage rating for compatibility with the target logic levels and supply voltages. Evaluate thermal performance based on the specific power dissipation conditions of the application environment.
This part belongs to the MUN5313DW1 series of complementary bias resistor transistors manufactured by onsemi. It is designed as a direct replacement for discrete transistor and resistor combinations. The series includes variants like NSBC144EPDXV6 and NSBC144EPDP6 in different packages such as SOT-563 and SOT-963.
Check for SMUN5313DW1T1G as a potential variant within the same series. Verify pinout compatibility if substituting with other BRT devices in the SOT-363 package.