MUN5313DW1T1G

MUN5313DW1T1G

$0.20
  • Description:TRANS PREBIAS 1NPN 1PNP 50V SC88
  • Series:-

SKU:44ddd1abf769 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS 1NPN 1PNP 50V SC88
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):47kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:250mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363

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MUN5313DW1T1G

Overview

The MUN5313DW1T1G is a dual Bias Resistor Transistor (BRT) from onsemi, housed in an SOT-363 package. It integrates two NPN transistors with monolithic bias resistor networks, each consisting of a series base resistor and a base-emitter resistor. The device supports a maximum collector-emitter voltage of 50 Vdc and continuous collector current of 100 mAdc. Typical input resistance is 47 kOhms with a ratio of 1. DC current gain is minimum 80 at 5 mA and 10 V. Power dissipation reaches 256 mW for one junction heated and 385 mW for both junctions heated at 25°C ambient. Operating temperature ranges from -55°C to +150°C.

Feature Summary

  • Integrates dual NPN transistors with monolithic bias resistor networks to replace discrete components
  • Reduces board space and component count by combining transistor and resistors into a single device
  • Simplifies circuit design through integrated biasing

Applications

  • Low power surface mount applications where board space is limited
  • Circuit designs requiring simplified biasing networks
  • Systems aiming to reduce overall component count

Procurement Notes

Verify the specific ordering suffix and package style against the manufacturer's latest documentation before procurement. Confirm that the SOT-363 pinout matches the intended PCB footprint. Ensure compliance with RoHS and Pb-Free requirements if specified for the application. Check for any discontinued status or recommended new design alternatives via official channels.

Selection Notes

Select this component when a dual NPN digital transistor configuration is required within a compact SOT-363 footprint. Consider the 47 kOhm typical input resistance and 50 V voltage rating for compatibility with the target logic levels and supply voltages. Evaluate thermal performance based on the specific power dissipation conditions of the application environment.

Part Context

This part belongs to the MUN5313DW1 series of complementary bias resistor transistors manufactured by onsemi. It is designed as a direct replacement for discrete transistor and resistor combinations. The series includes variants like NSBC144EPDXV6 and NSBC144EPDP6 in different packages such as SOT-563 and SOT-963.

Replacement Considerations

Check for SMUN5313DW1T1G as a potential variant within the same series. Verify pinout compatibility if substituting with other BRT devices in the SOT-363 package.

MUN5313DW1T1GMUN5313DW1T1G
$0.20
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