MUN5314DW1T1

Overview

The onsemi MUN5314DW1T1 is a Dual Bias Resistor Transistor (BRT) housed in an SOT-363 package. It integrates one NPN and one PNP silicon transistor with monolithic bias networks, each consisting of a series base resistor (R1) and a base-emitter resistor (R2). The device features a collector current of 100 mA and a collector-emitter voltage rating of 50 Vdc. Internal resistors are specified as R1 = 10 kΩ and R2 = 47 kΩ.

Feature Summary

• Integrates complementary NPN and PNP transistors with built-in bias resistors to replace discrete components.
• Designed for low power surface mount applications where board space is limited.

Applications

• Low power surface mount circuit designs requiring compact form factors.
• Applications utilizing the SOT-363 package for space-constrained layouts.

Procurement Notes

Verify the specific part number MUN5314DW1T1 against official manufacturer documentation to confirm internal resistor values and electrical characteristics. Ensure compatibility with the SOT-363 footprint and thermal requirements during integration.

Selection Notes

Select this component when a dual BRT configuration with specific 10 kΩ and 47 kΩ resistor ratios is required. Confirm that the 50 Vdc voltage rating and 100 mA current capacity meet the circuit demands.

Part Context

This component belongs to the MUN5311DW1T1 Series from onsemi. The series includes various combinations of NPN and PNP digital transistors with different internal resistor values, all sharing the same SOT-363 package and general electrical ratings.

Replacement Considerations

MUN5314DW1T1G