MUN5314DW1T1G

MUN5314DW1T1G

$0.21
  • Description:TRANS PREBIAS 1NPN 1PNP 50V SC88
  • Series:-

SKU:cd0291b096d4 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS 1NPN 1PNP 50V SC88
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:250mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363

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MUN5314DW1T1G

Overview

The onsemi MUN5314DW1T1G is a dual digital transistor featuring an NPN and PNP configuration housed in a SOT-363 (SC-88) surface-mount package. It supports a maximum DC collector current of 100 mA and a collector-emitter voltage rating of 50 V. The device integrates built-in bias resistors with a typical input resistance of 10 kΩ and a resistor ratio of 0.21. It operates within a temperature range of -55 °C to +150 °C, offers a minimum DC current gain (hFE) of 80, and dissipates up to 256 mW of power. This component is AEC-Q100 qualified for automotive applications.

Feature Summary

  • Integrates complementary NPN and PNP transistors with built-in bias resistors to reduce external component count.
  • AEC-Q100 qualified for robust performance in demanding automotive environments.
  • Utilizes a compact SOT-363 surface-mount package to optimize PCB space efficiency.

Applications

  • Automotive electronic systems requiring qualified discrete components
  • General-purpose switching circuits utilizing integrated biasing
  • Interface logic level translation between microcontrollers and peripheral devices

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm exact packaging configurations such as reel or cut tape quantities. Ensure that the procurement channel sources directly from authorized distributors to guarantee authenticity and traceability. Cross-reference the full part number including all trailing characters to match the precise electrical characteristics and qualification status required for the design.

Selection Notes

Select this component when a complementary NPN/PNP pair with integrated biasing is required in a minimal footprint. The 10 kΩ input resistance suits standard logic interface applications. Verify that the 50 V voltage rating and 100 mA current capacity align with the circuit load requirements. Consider the AEC-Q100 qualification if the application involves automotive standards or high-reliability constraints.

Part Context

This part belongs to the MUN5314DW1 series of dual digital transistors manufactured by onsemi. These devices are designed to replace multiple discrete components by combining two transistors and their associated biasing resistors into a single package. The series provides a standardized solution for switching and amplification tasks where board space is limited.

Replacement Considerations

Direct substitutes include NSVMUN5314DW1T1G and SMUN5314DW1T1G. Verify pinout compatibility and electrical parameter equivalence before substitution. Confirm that any alternative maintains the same SOT-363 package dimensions and thermal characteristics.

MUN5314DW1T1GMUN5314DW1T1G
$0.21
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