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The onsemi MUN5314DW1T1G is a dual digital transistor featuring an NPN and PNP configuration housed in a SOT-363 (SC-88) surface-mount package. It supports a maximum DC collector current of 100 mA and a collector-emitter voltage rating of 50 V. The device integrates built-in bias resistors with a typical input resistance of 10 kΩ and a resistor ratio of 0.21. It operates within a temperature range of -55 °C to +150 °C, offers a minimum DC current gain (hFE) of 80, and dissipates up to 256 mW of power. This component is AEC-Q100 qualified for automotive applications.
Verify the specific ordering suffix against official manufacturer documentation to confirm exact packaging configurations such as reel or cut tape quantities. Ensure that the procurement channel sources directly from authorized distributors to guarantee authenticity and traceability. Cross-reference the full part number including all trailing characters to match the precise electrical characteristics and qualification status required for the design.
Select this component when a complementary NPN/PNP pair with integrated biasing is required in a minimal footprint. The 10 kΩ input resistance suits standard logic interface applications. Verify that the 50 V voltage rating and 100 mA current capacity align with the circuit load requirements. Consider the AEC-Q100 qualification if the application involves automotive standards or high-reliability constraints.
This part belongs to the MUN5314DW1 series of dual digital transistors manufactured by onsemi. These devices are designed to replace multiple discrete components by combining two transistors and their associated biasing resistors into a single package. The series provides a standardized solution for switching and amplification tasks where board space is limited.
Direct substitutes include NSVMUN5314DW1T1G and SMUN5314DW1T1G. Verify pinout compatibility and electrical parameter equivalence before substitution. Confirm that any alternative maintains the same SOT-363 package dimensions and thermal characteristics.