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The onsemi MUN5315DW1T1 is a dual Bias Resistor Transistor (BRT) housed in an SOT-363 package, integrating complementary NPN and PNP silicon transistors with monolithic bias networks. It features a series base resistor of 10 kΩ and an open base-emitter resistor configuration. The device supports a maximum collector current of 100 mA and a collector-emitter voltage of 50 Vdc. Thermal dissipation reaches 256 mW at 25°C with a junction-to-ambient resistance of 490°C/W. Operating temperatures range from -55°C to +150°C.
Verify the specific ordering suffix against official manufacturer documentation to confirm packaging details and compliance status. Ensure the procurement channel sources directly from authorized distributors or the manufacturer to guarantee authenticity. Cross-reference the part marking diagram with received inventory to validate the component identity before integration into production lines.
Select this component when a complementary NPN/PNP pair with fixed biasing is required in a minimal footprint. The 10 kΩ input resistor suits standard logic interface levels. Evaluate thermal constraints carefully, as the SOT-363 package has limited power dissipation capabilities compared to larger packages. Confirm that the open emitter resistor configuration meets the specific drive requirements of the target application.
This component belongs to the MUN5311DW1T1 Series of Dual Bias Resistor Transistors. The series provides various resistor combinations within the same SOT-363 footprint. The MUN5315DW1T1 specifically offers a 10 kΩ series resistor with no base-emitter shunt resistor, distinguishing it from other variants in the family that include parallel resistance.
Compatible substitutes include the LMUN5315DW1T1 from LRC. Verify pinout compatibility and electrical characteristics match the original specifications before substitution.