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The MUN5316DW1T1G is a dual Bias Resistor Transistor (BRT) from the MUN5311DW1T1 series, manufactured by onsemi. It integrates an NPN and a PNP silicon surface mount transistor with monolithic bias resistor networks into a single SOT-363 package. The device features a series base resistor (R1) of 4.7 kΩ and no base-emitter resistor (R2). Maximum ratings include a collector-base voltage (VCBO) and collector-emitter voltage (VCEO) of 50 Vdc, and a collector current (IC) of 100 mAdc. Thermal characteristics specify a total device dissipation of 187 mW at 25°C for one junction heated, with a thermal resistance (RθJA) of 670 °C/W.
Verify the specific ordering suffix against official manufacturer documentation to confirm exact shipping configuration and compliance status. Ensure the procurement channel sources directly from authorized distributors or the manufacturer to guarantee authenticity. Cross-reference the part number with the latest datasheet revision to confirm electrical parameters match the intended application requirements before finalizing orders.
Select this component when a complementary pair of NPN and PNP digital transistors is required in a minimal footprint. The 4.7 kΩ input resistor value suits specific biasing needs compared to other variants in the series. Consider the 50 V voltage rating and 100 mA current capability relative to the load requirements. Evaluate the SOT-363 package constraints regarding thermal dissipation and soldering profiles during the design phase.
This component belongs to the MUN5311DW1T1 series of Dual Bias Resistor Transistors. The series offers various resistor combinations within the same SOT-363 package to provide flexibility in biasing configurations. The MUN5316DW1T1G specifically denotes the variant with a 4.7 kΩ series base resistor and open base-emitter connection for both the NPN and PNP elements.
MUN5316DW1T1