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The MUN5316DW1T1G is a digital transistor array manufactured by onsemi, featuring one NPN and one PNP pre-biased transistor within a single SOT-363 (SC-88) surface-mount package. It provides a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device includes an integrated base resistor with a typical value of 4.7 kOhms. Key electrical parameters include a minimum DC current gain (hFE) of 160 at 5 mA and 10 V, a power dissipation rating of 187 mW to 250 mW depending on the source, and an operating temperature range from -55 °C to +150 °C.
Verify the specific datasheet revision and AEC-Q101 automotive qualification status prior to procurement, as documentation sources vary regarding these attributes. Confirm that the SC-88/SC-70-6/SOT-363 pinout matches the target PCB footprint. Ensure compliance with RoHS directives and check for any recent Production Change Notices affecting material composition or manufacturing sites.
Select this component when a complementary NPN/PNP pair with fixed biasing is required in a minimal footprint. The 4.7 kOhm internal resistor suits moderate drive currents. Compare against similar MUN53xx series parts if different resistance values or all-NPN configurations are needed. Verify that the 50 V breakdown voltage meets the system's supply rail requirements.
This part belongs to the MUN5316DW1 series of digital transistors produced by onsemi. It is functionally distinct from single-transistor variants like the SMUN5216DW1T1G or dual-NPN types such as the MUN5236DW1T1G. The suffix DW1 indicates the specific SOT-363 packaging and tape-and-reel configuration used for automated assembly.
Direct substitutes within the same family include NSVMUN5316DW1T1G, which shares identical electrical characteristics and pinout. Other compatible alternatives may include MUN5314DW1T1G or MUN5313DW1T1G, provided their respective base resistor values and hFE specifications align with the design requirements.