SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The onsemi MUN5330DW1T1 is a dual Bias Resistor Transistor (BRT) housed in an SOT-363 package, containing one NPN and one PNP silicon surface mount transistor with monolithic bias resistor networks. It features a collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc. The integrated network includes a series base resistor (R1) of 1 kΩ and a base-emitter resistor (R2) of 1 kΩ. DC current gain is specified at a minimum of 3.0 at 5.0 mA and 10 V. Total device power dissipation reaches 250 mW when both junctions are heated at 25°C ambient temperature.
Verify the specific ordering suffix against official documentation to confirm shipping configuration. The datasheet indicates standard tape and reel packaging with 3000 units per reel. Confirm that the requested part number matches the exact electrical characteristics and marking codes defined in the manufacturer's specifications before finalizing procurement orders.
Select this component when a complementary NPN/PNP pair with identical 1 kΩ bias resistors is required in a minimal footprint. Ensure the 50 V collector-emitter voltage rating meets the circuit requirements. Verify that the 100 mA continuous current capability is sufficient for the intended load conditions and that the thermal resistance allows for adequate heat dissipation within the operating temperature range.
This component belongs to the MUN53xxDW1T1 series of dual Bias Resistor Transistors from onsemi. These devices are designed to integrate two transistors and their associated biasing resistors into a single SOT-363 package. This integration reduces the overall component count and board area compared to using separate discrete transistors and resistors.
MUN5330DW1T1G