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The MUN5331DW1T1G is a dual digital transistor from onsemi, integrating one NPN and one PNP pre-biased transistor within a single SOT-363 (SC-88) surface-mount package. This configuration combines two complementary Bias Resistor Transistors (BRTs), each featuring built-in series base and base-emitter resistors with a typical value of 2.2 kOhms and a ratio of 1. The device supports a maximum collector current of 100 mA and a collector-emitter voltage of 50 V. It offers a minimum DC current gain (hFE) of 8 at 5 mA and 10 V, with a power dissipation rating of 187 mW. Operating temperatures range from -55 °C to +150 °C.
Verify the specific suffix DW1T1G against official onsemi documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives and check for AEC-Q101 automotive qualification status if required for the target application environment.
Select this component when a complementary pair of NPN and PNP digital transistors is needed in a single footprint. Compare input resistance values and hFE requirements against other MUN53xx series variants to ensure compatibility with existing drive signals and load conditions.
This part belongs to the MUN5331DW1 family of dual BRTs manufactured by onsemi. It serves as a direct replacement for discrete resistor-transistor networks, offering improved reliability and reduced assembly complexity compared to individual components in similar SOT-363 packages.
Direct substitutes include NSVMUN5331DW1T1G for automotive-grade applications. Verify pinout compatibility and electrical parameters before replacing with generic equivalents from other manufacturers.