MUN5331DW1T1G

MUN5331DW1T1G

$0.21
  • Description:TRANS PREBIAS 1NPN 1PNP 50V SC88
  • Series:-

SKU:10b4f14533ee Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS 1NPN 1PNP 50V SC88
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):2.2kOhms
  • Resistor - Emitter Base (R2):2.2kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:8 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:250mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363

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MUN5331DW1T1G

Overview

The MUN5331DW1T1G is a dual digital transistor from onsemi, integrating one NPN and one PNP pre-biased transistor within a single SOT-363 (SC-88) surface-mount package. This configuration combines two complementary Bias Resistor Transistors (BRTs), each featuring built-in series base and base-emitter resistors with a typical value of 2.2 kOhms and a ratio of 1. The device supports a maximum collector current of 100 mA and a collector-emitter voltage of 50 V. It offers a minimum DC current gain (hFE) of 8 at 5 mA and 10 V, with a power dissipation rating of 187 mW. Operating temperatures range from -55 °C to +150 °C.

Feature Summary

  • Integrates complementary NPN and PNP transistors with monolithic bias resistor networks to replace discrete components.
  • Provides simplified circuit design by eliminating external biasing resistors while maintaining signal integrity.
  • Optimized for low-power surface mount applications requiring minimal board space through compact SC-88 packaging.

Applications

  • General-purpose switching and logic interface circuits
  • Battery-powered portable devices requiring space-efficient designs
  • Automotive electronics systems

Procurement Notes

Verify the specific suffix DW1T1G against official onsemi documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives and check for AEC-Q101 automotive qualification status if required for the target application environment.

Selection Notes

Select this component when a complementary pair of NPN and PNP digital transistors is needed in a single footprint. Compare input resistance values and hFE requirements against other MUN53xx series variants to ensure compatibility with existing drive signals and load conditions.

Part Context

This part belongs to the MUN5331DW1 family of dual BRTs manufactured by onsemi. It serves as a direct replacement for discrete resistor-transistor networks, offering improved reliability and reduced assembly complexity compared to individual components in similar SOT-363 packages.

Replacement Considerations

Direct substitutes include NSVMUN5331DW1T1G for automotive-grade applications. Verify pinout compatibility and electrical parameters before replacing with generic equivalents from other manufacturers.

MUN5331DW1T1GMUN5331DW1T1G
$0.21
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