MUN5332DW1T1G

Overview

The MUN5332DW1T1G is a complementary digital transistor array manufactured by onsemi, integrating one NPN and one PNP bipolar junction transistor within a single SC-88-6 (SOT-363) surface-mount package. This component features built-in bias resistors with a typical value of 4.7 kOhms and a resistance ratio of 1. It supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device operates across an extended temperature range from -55°C to +150°C, with a power dissipation rating of 187 mW. Designed for high-density applications, it offers a minimum DC current gain (hFE) of 15.

Feature Summary

• Integrates complementary NPN and PNP transistors with pre-biased resistors in a compact dual configuration.
• Utilizes the SC-88-6 surface-mount package to minimize footprint while maintaining robust electrical performance.
• Supports wide operating temperature ranges suitable for demanding industrial and commercial environments.

Applications

• General-purpose switching circuits requiring complementary logic levels.
• Driver stages for low-power loads in consumer electronics.
• Interface buffering between microcontrollers and peripheral devices.

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging and compliance specifications. Confirm RoHS status and material declarations directly with the supplier or through certified datasheets prior to integration into production designs.

Selection Notes

Select this component when a matched NPN/PNP pair with integrated biasing is required to simplify circuit design and reduce board space. Ensure the 50V voltage rating and 100mA current capacity align with the target application's load requirements and environmental conditions.

Part Context

This part belongs to the MUN5332DW1 series of digital transistors produced by onsemi. It is functionally related to other models in the family that vary primarily in resistor values or current gain characteristics, all sharing the same SC-88-6 package form factor for interchangeability in layout-constrained designs.

Replacement Considerations

Direct substitutes include MUN5332DW1T1GOS and MUN5332DW1T1. Verify pinout compatibility and electrical parameters before substitution.

FAQ

What is the typical input resistance value for the MUN5332DW1T1G?

The typical input resistance value is 4.7 kOhms.

Does the MUN5332DW1T1G contain both NPN and PNP transistors?

Yes, it is a complementary digital transistor containing one NPN and one PNP transistor.

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is rated at 50 V.