MUN5333DW1T1

Overview

The MUN5333DW1T1 is a complementary Bias Resistor Transistor (BRT) from onsemi, integrating an NPN and a PNP transistor with monolithic bias resistor networks into a single SOT-363 package. It features a typical series base resistor (R1) of 4.7 kΩ and a base-emitter resistor (R2) of 47 kΩ. The device supports a maximum collector-emitter voltage (VCEO) of 50 Vdc and a continuous collector current (IC) of 100 mAdc. Thermal characteristics include a total device dissipation of 187 mW at 25°C for one junction heated, operating within a temperature range of -55°C to +150°C.

Feature Summary

• Integrates dual complementary transistors with built-in bias resistors to replace discrete components
• Designed for low power surface mount applications requiring minimal board space
• Eliminates external resistor bias network requirements through monolithic integration

Applications

• Low power surface mount circuit designs
• Applications where board space is limited
• Digital switching circuits replacing discrete transistor-resistor combinations

Procurement Notes

Verify the specific ordering suffix against official documentation, as variations such as 'G' or 'T3' may indicate different packaging or compliance standards. Confirm RoHS status and automotive qualification requirements directly with the manufacturer or authorized distributors before procurement.

Selection Notes

Select this component when a complementary NPN/PNP pair with integrated biasing is required in a compact form factor. Ensure the 4.7 kΩ input resistance and 47 kΩ emitter resistor values align with the target circuit's drive requirements and logic levels.

Part Context

This part belongs to the MUN5311DW1T1 series of Dual Bias Resistor Transistors. It shares the same SOT-363 package and general electrical ratings as other members of the series, differing primarily in the internal resistor values (R1 and R2) configured for specific biasing needs.

Replacement Considerations

NSVMUN5333DW1T3G