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The onsemi MUN5334DW1T1G is a dual digital transistor featuring one NPN and one PNP element in a SC-88-6 (SOT-363) surface-mount package. It supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device integrates typical base resistors of 22 kOhms with a resistance ratio of 0.47. Power dissipation is rated at 187 mW, operating within a temperature range of -55 °C to +150 °C. Minimum DC current gain (hFE) is specified at 80.
Verify the complete ordering part number against official manufacturer documentation to ensure correct suffix alignment. Confirm RoHS compliance status and specific tape-and-reel packaging requirements prior to procurement. Cross-reference datasheet revisions to validate electrical characteristics match the intended design specifications.
Select this component when a complementary NPN/PNP pair with integrated biasing is required in a minimal footprint. Ensure the 100 mA current limit and 187 mW power dissipation meet thermal constraints. Verify that the 22 kOhm internal resistor values align with the target logic drive levels and switching speeds.
This part belongs to the MUN5334DW1 series of pre-biased digital transistors from onsemi. It utilizes silicon planar technology housed in the SC-88 package. The device is designed to replace discrete resistor-transistor networks, reducing board space and assembly complexity in modern electronic designs.
Direct substitutes include other onsemi MUN5334 variants or equivalent dual digital transistors from manufacturers like ROHM or Diodes Inc. Verify pinout compatibility and electrical parameter equivalence before substitution.