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The onsemi MUN5335DW1T1G is a complementary digital transistor featuring integrated NPN and PNP transistors within a SOT-363 (SC-88) surface-mount package. It supports a maximum DC collector current of 100 mA and a collector-emitter voltage (VCEO) of 50 V. The device includes built-in bias resistors with a typical input resistance of 2.2 kOhms and a resistor ratio of 0.047. It operates across a temperature range from -55 °C to +150 °C, with a power dissipation rating of 187 mW. The component contains two elements per chip and utilizes a six-pin configuration for compact circuit integration.
Verify the complete ordering part number against official onsemi documentation to ensure correct suffix alignment. Confirm that the specific revision matches the required electrical characteristics and packaging format. Cross-reference the manufacturer's datasheet for any updates regarding compliance standards or pinout configurations before finalizing procurement specifications.
Select this component when a complementary NPN/PNP pair with fixed biasing is required in a minimal footprint. Ensure the design accounts for the 2.2 kOhm typical input resistance and 0.047 resistor ratio. Verify that the 100 mA current limit and 50 V voltage rating exceed the application's peak operational demands under all environmental conditions.
This part belongs to the MUN5335DW1 series of digital transistors manufactured by onsemi. It is designed as a drop-in replacement for discrete resistor-transistor networks, simplifying PCB layout. The SOT-363 package is standard for dual-transistor applications in consumer and industrial electronics, offering reliable surface-mount assembly compatibility.
Direct substitutes include other onsemi MUN5335 variants with identical electrical parameters but different packaging or tape-and-reel specifications. Verify pin-to-pin compatibility and thermal resistance ratings when considering cross-manufacturer alternatives to ensure equivalent performance in the existing circuit topology.