MUN5335DW1T1G

MUN5335DW1T1G

$0.21
  • Description:TRANS PREBIAS 1NPN 1PNP 50V SC88
  • Series:-

SKU:7e454c44a350 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS 1NPN 1PNP 50V SC88
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):2.2kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:250mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363

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MUN5335DW1T1G

Overview

The onsemi MUN5335DW1T1G is a complementary digital transistor featuring integrated NPN and PNP transistors within a SOT-363 (SC-88) surface-mount package. It supports a maximum DC collector current of 100 mA and a collector-emitter voltage (VCEO) of 50 V. The device includes built-in bias resistors with a typical input resistance of 2.2 kOhms and a resistor ratio of 0.047. It operates across a temperature range from -55 °C to +150 °C, with a power dissipation rating of 187 mW. The component contains two elements per chip and utilizes a six-pin configuration for compact circuit integration.

Feature Summary

  • Integrates complementary NPN and PNP transistors with built-in bias resistors to reduce external component count.
  • Provides high-density packaging in a small SOT-363 form factor suitable for space-constrained designs.
  • Features a wide operating temperature range extending up to +150 °C for robust thermal performance.

Applications

  • General-purpose switching applications requiring complementary logic levels.
  • Interface circuits between microcontrollers and peripheral devices.
  • Battery-powered portable electronics due to low profile and efficiency.

Procurement Notes

Verify the complete ordering part number against official onsemi documentation to ensure correct suffix alignment. Confirm that the specific revision matches the required electrical characteristics and packaging format. Cross-reference the manufacturer's datasheet for any updates regarding compliance standards or pinout configurations before finalizing procurement specifications.

Selection Notes

Select this component when a complementary NPN/PNP pair with fixed biasing is required in a minimal footprint. Ensure the design accounts for the 2.2 kOhm typical input resistance and 0.047 resistor ratio. Verify that the 100 mA current limit and 50 V voltage rating exceed the application's peak operational demands under all environmental conditions.

Part Context

This part belongs to the MUN5335DW1 series of digital transistors manufactured by onsemi. It is designed as a drop-in replacement for discrete resistor-transistor networks, simplifying PCB layout. The SOT-363 package is standard for dual-transistor applications in consumer and industrial electronics, offering reliable surface-mount assembly compatibility.

Replacement Considerations

Direct substitutes include other onsemi MUN5335 variants with identical electrical parameters but different packaging or tape-and-reel specifications. Verify pin-to-pin compatibility and thermal resistance ratings when considering cross-manufacturer alternatives to ensure equivalent performance in the existing circuit topology.

MUN5335DW1T1GMUN5335DW1T1G
$0.21
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