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The onsemi MUN5335DW1T2G is a complementary digital transistor array featuring integrated NPN and PNP transistors with monolithic bias resistor networks. Housed in the SC-88 (SOT-363) surface-mount package, it provides two isolated devices within a single component. The unit supports a maximum collector-emitter voltage of 50 V DC and a continuous collector current of 100 mA. It includes typical input resistors of 2.2 kOhms with a ratio of 0.047. Operating temperatures range from -55°C to +150°C, with a total power dissipation of 187 mW.
Verify the specific suffix 'T2' against official manufacturer documentation, as standard listings typically utilize 'T1'. Confirm that the ordering code matches the exact pinout and electrical characteristics required for the target application. Ensure compliance with RoHS directives if applicable to the manufacturing process.
Select this component when a complementary NPN/PNP pair with fixed internal biasing is necessary. The SC-88 package is suitable for high-density layouts. Verify that the 100 mA current rating and 50 V voltage limits align with the operational requirements of the specific circuit design.
This device belongs to the MUN5335DW1 series of Bias Resistor Transistors (BRT). These components are designed to integrate a single transistor with a monolithic bias network consisting of a series base resistor and a base-emitter resistor. The series aims to simplify designs by reducing component count.
MUN5335DW1T1G: Complementary digital transistor in SC-88 package with identical electrical ratings.