MUN5335DW1T2G

Overview

The MUN5335DW1T2G is a digital transistor from onsemi, featuring a complementary dual configuration with NPN and PNP transistors. It operates within a collector-emitter voltage (VCEO) of 50 V DC and supports a continuous collector current of 100 mA. The device incorporates built-in bias resistors, with a typical input resistance of 2.2 kOhms and a typical resistor ratio of 0.047. Packaged in an SC-88-6 surface-mount format, it offers a power dissipation rating of 187 mW. The component functions reliably across a temperature range from -55°C to +150°C, ensuring stable performance in various electronic applications.

Feature Summary

• Integrates complementary NPN and PNP transistors into a single compact package for space-efficient circuit design.
• Includes built-in bias resistors to simplify interface requirements and reduce external component count.
• Provides robust electrical isolation between the two internal transistor elements.

Applications

• General-purpose switching circuits requiring complementary logic levels.
• Interface drivers for microcontrollers and digital logic gates.
• Battery-powered devices utilizing low-power complementary configurations.

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm exact packaging and tape specifications. Ensure that the SC-88-6 package dimensions align with your PCB footprint requirements. Confirm RoHS compliance status through the latest datasheet or product compliance reports before finalizing procurement plans.

Selection Notes

Select this component when a complementary NPN/PNP pair is required in a minimal footprint. The 2.2 kOhm input resistance suits standard logic interfaces. Verify that the 100 mA current rating meets load requirements. Consider the 187 mW power dissipation limit for thermal management in dense layouts.

Part Context

This part belongs to the MUN5335DW1 series of digital transistors manufactured by onsemi. These components are designed to replace discrete resistor-transistor networks. The series utilizes advanced silicon processes to achieve high reliability and consistent electrical characteristics across the operating temperature range.

Replacement Considerations

Check for direct substitutes such as NSVMUN5335DW1T1G or SMUN5335DW1T1G. Verify pinout compatibility and electrical parameter equivalence before substitution. Consult official cross-reference guides for confirmed alternatives.