MUN5336DW1T1G

MUN5336DW1T1G

$0.23
  • Description:TRANS NPN/PNP BJT SC70-6
  • Series:-

SKU:6329b4a4ee2a Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN/PNP BJT SC70-6
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):100kOhms
  • Resistor - Emitter Base (R2):100kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:250mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363

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MUN5336DW1T1G

Overview

The MUN5336DW1T1G is a complementary digital transistor array manufactured by onsemi, integrating one NPN and one PNP pre-biased transistor within a single SOT-363 (SC-88) surface-mount package. It features a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device includes built-in bias resistors with typical values of 100 kOhms for both the base and emitter connections. Key electrical specifications include a minimum DC current gain (hFE) of 150, a power dissipation rating of 385 mW, and an emitter-base voltage of 6 V. The component operates across a temperature range from -55°C to +150°C and holds AEC-Q101 qualification.

Feature Summary

  • Integrates complementary NPN and PNP transistors with monolithic bias resistors in a compact six-pin package
  • AEC-Q101 qualified for automotive electronics applications requiring high reliability
  • Provides simplified circuit design through integrated pre-biasing, reducing external component count

Applications

  • Automotive logic switching circuits
  • General-purpose digital buffering
  • Level shifting between different voltage domains

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm exact packaging and reel specifications. Ensure that the procurement channel sources genuine components directly from authorized distributors or the manufacturer to guarantee authenticity and traceability. Cross-reference the part number with the latest datasheet revisions to confirm compliance with current environmental standards such as RoHS directives before finalizing purchase orders.

Selection Notes

Select this component when a complementary pair of pre-biased transistors is required in a minimal footprint. The 100 kOhm internal resistor values are suitable for standard logic interface applications. Consider the 385 mW power dissipation limit and the 50 V voltage rating to ensure operation within safe limits. Verify that the SOT-363 package dimensions align with the target PCB layout constraints.

Part Context

This part belongs to the MUN5336DW1 series of complementary digital transistors produced by onsemi. It is designed to replace discrete resistor-transistor networks, offering space savings and improved performance consistency. The series is widely used in consumer electronics and automotive systems where small form factor and reliable switching are critical requirements.

Replacement Considerations

Direct pin-compatible substitutes may include other complementary BRTs in SOT-363 packages with similar electrical ratings, such as those from Fairchild or Diodes Inc., provided the hFE and resistor values match the design requirements.

MUN5336DW1T1GMUN5336DW1T1G
$0.23
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