ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：DIODE MODULE GP 50V 50A 2TOWER
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Diode Configuration：1 Pair Common Cathode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：50 V
- Current - Average Rectified (Io) (per Diode)：50A
- Voltage - Forward (Vf) (Max) @ If：1.3 V @ 50 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：75 ns
- Current - Reverse Leakage @ Vr：25 µA @ 50 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Twin Tower
- Supplier Device Package：Twin Tower
- Grade：-
- Qualification：-
Download product information
Overview
The MUR10005CT is a silicon super fast recovery diode module manufactured by GeneSiC Semiconductor. It features an average forward current rating of 100 A per package and a repetitive peak reverse voltage of 50 V. The device supports a peak forward surge current of 1500 A per leg and exhibits a maximum instantaneous forward voltage of 1.0 V at specified conditions. Its maximum reverse recovery time is 75 ns, with a thermal resistance from junction to case of 1.0 °C/W per leg. The operating temperature range spans from -55 °C to +150 °C.
Feature Summary
- High surge capability designed for demanding power applications
- Utilizes a Twin Tower package configuration for efficient mounting
- Super fast recovery characteristics minimize switching losses
Applications
- High frequency DC-DC converters
- Free-wheeling rectification in motor drives
- Power supply output stages
Procurement Notes
Verify the specific part number against official datasheets to confirm electrical ratings and pinout configurations. Ensure compatibility with existing thermal management solutions given the junction-to-case thermal resistance specifications. Confirm that the Twin Tower package dimensions align with the intended mechanical assembly requirements before finalizing procurement decisions.
Selection Notes
Select this component when high current handling and rapid switching speeds are required in a robust module format. The 100 A rating and low reverse recovery time make it suitable for efficient power conversion topologies. Evaluate the thermal performance within the system context to ensure the junction temperature remains within the specified operational limits during continuous operation.
Part Context
This module belongs to the MUR100 series of silicon super fast recovery diodes. The series offers various voltage ratings ranging from 50 V to 200 V while maintaining consistent current capabilities. The Twin Tower packaging provides a standardized form factor for industrial power electronics applications requiring reliable high-current rectification.
Replacement Considerations
Compatible substitutes include other modules within the same MUR100 series family, such as the MUR10010CT or MUR10020CT, provided the voltage ratings meet the circuit requirements. Verify that any replacement maintains the same Twin Tower package style and electrical characteristics to ensure direct interchangeability.
